SM511 Search Results

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the SM511665 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor SM5116160 B_ E 2 G 0 0 4 9 -17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The SM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The M SM5116160B achieves high integration, high-speed operation, and low-power

NO 4-D

Abstract: SM512D sm5118 SM511 SM5* sharp rme2 Sharp SM510
Contextual Info: 4 -B it M icrocom puter LC D Driver S M 5 1 1 /S M 5 1 2 SM511/SM512 • 4-Bit Microcomputer (LCD Driver) Pin Connections Description T h e S M 5 1 1 / S M 5 1 2 is a C M O S 4 - b i t m i c r o ­ c o m p u te r w h ic h in te g ra t e s a 4 - bit p a ra lle l p r o c e s ­

SM51108E

Abstract: SM51108EL SM51108 TX111
Contextual Info: NT IA PL M CO S oH *R Features Applications • Lead free ■ RoHS compliant* ■ IEEE802 3af/ANSI X3.263 ■ VolP ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit .350 µH min.

MSM5117400

Abstract: msc23432
Contextual Info: O K I Semiconductor MSC23432-xxBS8/DS8 ts¥@D0M0in irf 4,194,304-Word by 32-Bit Dynamic RAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23432-xxB S8/D S8 is a fully decoded 4,194,304-w ord x 32-bit CM OS D ynam ic Random Access Memory Module composed of eight 16-Mb D RAM s in SOJ M SM5117400) packages m ounted with

M50 .0022

Abstract: MSM5116400
Contextual Info: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 23841-xxBS20/D S20 is a fully decoded 8,388,608-word x 40-bit CM OS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ M SM5116400 packages mounted

MSM5116400

Abstract: CSR1010
Contextual Info: O K I Semiconductor MSC23433-XXBS8/DS8 [PmslioiitnirSDFf 4,194,304-W ord by 32-B it D RAM M odule: Fast Page M ode D ESC R IP TIO N The OKI M SC 23433-xxBS8/ DS8 is a fully decoded 4,194,304-w ord x 32-bit CM OS Dynam ic Random Access M emory M odule composed of eight 16-Mb DRAM s in SOJ M SM5116400 packages mounted with

tm5119

Contextual Info: Cross Reference Guide TM5119 / SM5119* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 15.5 dB Typical 14.0 dB Min Noise Figure 2.2 dB Typical 3.0 dB Max P1dB 16.0 dBm Typical 14.0 dBm Min

SM51108E

Abstract: TX1-1-1
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ VolP ■ IEEE802 3af/ANSI X3.263 ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit . 350 H min. . (100 KHz, 0.1 V with 8 mA DC bias)

SM51108

Abstract: SM51108E
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ VolP ■ IEEE802 3af/ANSI X3.263 ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit . 350 H min. .(100 KHz, 0.1 V with 8 mA DC bias)

7B424

Abstract: MSM5117100
Contextual Info: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The SM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the SM5117100 is OKI's CMOS silicon gate process technology.

MSM5116400

Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM5116400 is a n ew generation d yn am ic organized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 16400 is O K I's C M O S silico n gate process technology.

sm5118

Contextual Info: Cross Reference Guide TM5118 / SM5118* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 3.0 - 100.0 MHz Gain 16.3 dB Typical 15.5 dB Min Noise Figure 1.5 dB Typical 2.0 dB Max P1dB 6.5 dBm Typical 5.5 dBm Min

Contextual Info: Cross Reference Guide TM5110 / SM5110* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 10.0 - 500.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 2.5 dB Typical 3.0 dB Max P1dB 10.5 dBm Typical 9.0 dBm Min

Silicon Microstructures

Abstract: OEM PRESSURE SILICON DIE SM5112 harsh pressure die Microstructures
Contextual Info: SM5112 SILICON MICROSTRUCTURES INCORPORATED • • Harsh Environment Absolute Silicon Pressure Die OEM ABSOLUTE SILICON PRESSURE SENSOR DIE FOR HARSH ENVIRONMENTS REAR ENTRY FOR PROTECTION OF THE PIEZORESISTIVE BRIDGE NETWORK – ONLY SILICON AND GLASS EXPOSED

SM5631

Abstract: SM511 16X4 40x4 lcd SM563 melody generator
Contextual Info: MICROCOMPUTERS ★ 40x4 1.2k 2k SM500 !— 64 128x4 132 SM510 136 SM511 - ; SM5K1 j— 200 SM512 I 160x4 128 SM563 j 256x4 256 SM565 52x4 80 SM531 88x4 96 SM530 LCD games LCD games Remote controls [— \— _ 69x4 84 SM5L1 ;— 3k 130x4 136 SM5L2

SM51108EL

Abstract: sn 0952 SM51108 SM51108E Mn-Zn fe2o3 mno zno
Contextual Info: MATERIAL DECLARATION SHEET Material SM51108EL Product Line 10/100 Transformer Date 16-February-2006 Rev. Date No. Construction element 1 Core Material group Mn-Zn FERRITE CORE Material weight [g] Materials 0.112 Fe2O3 CAS if applicable N/A MnO N/A 16 ZnO Sn

40x4 lcd

Abstract: SM511 SM510 128X4 32X4 SM563
Contextual Info: MICROCOMPUTERS ROM byte RAM (bit) LCD segm ent Model No. 40x4 56 SM500 Application C o u n ters 1.2k 2 .7 k 3 V Operation 80x4 64 SM5K1 128x4 1 32 SM510 136 SM511 T im ers L C D gam es C alcu lators 128x4 4k 160x4 LCD driver series 8k 1.2k - SM512 128 SM563

34X4

Abstract: 16X4 LCD 170X4 9688x melody generator SM511 SM563
Contextual Info: MICROCOMPUTERS ★ Under development RAM bit LCD segment Model No. 1.2k 80x4 64 SM5K1 2.7k 128x4 132 SM510 3k 130x4 136 ROM (byte) Application Counters Timers SM5M2 LCD games(vwth ★SM5N2 3 V Operation 136 voice emitting fgncfion! Calculators SM511 Voice emitting dock

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The SM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

1200ap

Abstract: PCM1701P Burr-Brown 3400B pcm65p pcm1701 4203SQ mp8316 DAC800-CBI-V MPC8S 4203j
Contextual Info: Burr-Brown Corporation Discontinued Products August 2, 1999 Model 0025MK 0100AP 0100MS-1 0100MS-2 0100MS-3 0100MS-4 0145MC 01AA-A1030-00 01DSA00024A001 01DSA00080A001 01DSA00236A002 01DSA00236A010 01DSA01898A003 0211B 0245MC 0422MC 0501-3A 0503A 0506/16 0506/16A

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The SM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

SM511

Abstract: SM8203 sm578 SM563 SM590 sharp
Contextual Info: MICROCOMPUTERS ★ Under development • 4-bit/8-bit Single-chip Microcomputer Development Support Systems S oftw are program s for single-chip m icrocom puters can be developed through a sim ple system com posed o f a personal co m p u te r running an M S-DO S operating system w hich serves as the