SM5110 Search Results

SM51108E

Abstract: SM51108EL SM51108 TX111
Contextual Info: NT IA PL M CO S oH *R Features Applications • Lead free ■ RoHS compliant* ■ IEEE802 3af/ANSI X3.263 ■ VolP ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit .350 µH min.

SM51108E

Abstract: TX1-1-1
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ VolP ■ IEEE802 3af/ANSI X3.263 ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit . 350 H min. . (100 KHz, 0.1 V with 8 mA DC bias)

SM51108

Abstract: SM51108E
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ VolP ■ IEEE802 3af/ANSI X3.263 ■ PoE SM51108L 10/100 Base Tx VolP Modules Power over Ethernet - PoE Electrical Specifications Inductance - Open Circuit . 350 H min. .(100 KHz, 0.1 V with 8 mA DC bias)

Contextual Info: Cross Reference Guide TM5110 / SM5110* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 10.0 - 500.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 2.5 dB Typical 3.0 dB Max P1dB 10.5 dBm Typical 9.0 dBm Min

SM51108EL

Abstract: sn 0952 SM51108 SM51108E Mn-Zn fe2o3 mno zno
Contextual Info: MATERIAL DECLARATION SHEET Material SM51108EL Product Line 10/100 Transformer Date 16-February-2006 Rev. Date No. Construction element 1 Core Material group Mn-Zn FERRITE CORE Material weight [g] Materials 0.112 Fe2O3 CAS if applicable N/A MnO N/A 16 ZnO Sn

1200ap

Abstract: PCM1701P Burr-Brown 3400B pcm65p pcm1701 4203SQ mp8316 DAC800-CBI-V MPC8S 4203j
Contextual Info: Burr-Brown Corporation Discontinued Products August 2, 1999 Model 0025MK 0100AP 0100MS-1 0100MS-2 0100MS-3 0100MS-4 0145MC 01AA-A1030-00 01DSA00024A001 01DSA00080A001 01DSA00236A002 01DSA00236A010 01DSA01898A003 0211B 0245MC 0422MC 0501-3A 0503A 0506/16 0506/16A

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The SM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

m5m5110

Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The SM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

T-46-23-15

Abstract: ah rzj IMSM511002AI MSM511002A-1A oki msm
Contextual Info: 4bE ]> w • b72454Q 000^534 RTS « O K I J O K I O K I SEMICONDU CT OR GROUP semiconductor_ M SM 511002A _ 1,048,576-WORD x 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The SM511002A is a new generation dynam ic RAM organized as 1,048,576 w ords by 1 bit. The

Contextual Info: Ethernet 10/100 Base-T Power over Ethernet PoE PSE Unit Protection Solution Products CDSOT236-0504C Objective Alternate Recommendations Other PortNote Solutions: • Ethernet - ESD Protection • Ethernet - Power Contact and Surge Protection • Ethernet - 10/100 Base-T Power over

EZAEG2A50AX

Abstract: SRVO5-4 CT0402V150RFG CGO603MLC-05LE SM5.TCT EZAEG3A50A SR05.TCT CD214L CG0805MLA-18KE PESD0402
Contextual Info: Bourns ESD Protection & Power Impulse Protection Short Form Catalog Schottky Diodes Transient Voltage Suppressor TVS Diodes ChipGuard® ESD Suppressors ESD Protection Product Applications FEATURES APPLICATIONS • RoHS compliant • Discrete & array configurations

Contextual Info: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The SM511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM 511001 A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The SM511001A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the SM511001A is OKI's CMOS silicon gate process technology.

SM51108

Abstract: PT6102x coupling transformer ethernet impulse generator 2035-09-SM TVS diode Application ethernet PT44216M4 CDSOT23-SRV05-4 SM511 2036-09-SM
Contextual Info: Ethernet and PoE Protection Technical Article December 2006 Protecting Ethernet Solutions Against Lightning Disturbances Written By Tim Ardley, B.Sc Hons Sr. Telecom Field Applications Engineer December 2006 1 Ethernet and PoE Protection Technical Article