0D041 Search Results

Contextual Info: 1 ^ 7 7°~? 'i □ 3 > fcfa — $ . / 1 -Chip Microcomputers BU2405L Series ROHM CO LTD 40E D BB 7826^'^ 0D04127 T BHRHM BU24 SL 4 i f 7 h 1 f 7 7 > < ? □ □ > t f :l - £ Series 4-Bit 1-Chip Microcomputer ~ r-i9 -i 9 - H O ►^•3K\Ì'sÉl2 /Dim ensions Unit : mm

u236

Abstract: K2154 KA2154
Contextual Info: SAMSUNG SE MICO ND UC TO R INC Tfl DE • T T m i M S 0D041ti7 1 T - - in * o i- o q KA2154 LINEAR INTEGRATED CIRCUIT VIDEO-CHROMA-DEFLECTION SYSTEM FOR A COLOR TELEVISION PAL/NTSC The KA2154 combines a PAL/NTSC video-chroma subsystem and a deflection combination on a single monolithic integrated circuit to

WD33C93

Abstract: western digital scsi bus interface controller
Contextual Info: WESTERN DIGITAL CORP 77 D e J T 7 1 Ö 2 S Ö 0D0411D 0 | 9718228 WESTERN DIGITÄL CORP WESTERN O R O 77C 0 4 1 1 0 D T'S2-3 3-ò 3 R DIGITAL A T I O N WD33C92 And WD33C93 SCSI-Bus Interface Controller DOCUMENT SCOPE This document describes both the WD33C92-SBIC and

Contextual Info: ALUMINUM EUECTROLYTIC CAPACITOR NORTH AMERICAN CAPACITO L L E D LK LL474R7 0D041L3 H4fl NACC SERIES ' ^ W ^ O D L O W LEAKAGE CURRENT ^rtS ^'14 ° • Leakage cu rre n t is very low after subjected to high tem perature, no-load condition, or after lengthly storage periods norm al tem perature

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: la n te EL2090C c HIGH PERFORMANCE ANAtflB INTEGRATED CIRCUITS 100 MHz DC-Restored Video Amplifier F e a tu re s G en eral D escription • Com plete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy a t N TSC

1n4816

Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
Contextual Info: INTERNATI ONAL RECTIFIER 4855452 SS d ËTJ 4ÖSS4S5 D D D 4 IiOb D 55C 04906 INTERNATIONAL R EC TIFIER Data Sheet No. PD-2.004C INTERNATIONAL RECTIFIER I O R 1N4816,1N5052,1QD, SOD SERIES 1.5 and 2 .0 Amp Molded Silicon Rectifier Diodes Description/Features

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

it4142

Abstract: DC VOLUME TONE CONTROL CIRCUIT
Contextual Info: SAMSUNG SEM ICON DU CTOR INC Tfi . DE | 7 ^ 4 1 4 2 . KA2107 0004114 2 y 7 - c f7 —o ^ LINEAR INTEGRATED CIRCUIT DC VOLUME, TONE CONTROL CIRCUIT The KA2107 is a silicon m onolitic integrated circu it designed for 2 Channel volume and tone control.

9304

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Contextual Info: MOSEL VITELIC V53C316516500 3 .3 V O L T 4 M X 16 EDO PAG E M ODE CMOS DYNAM IC RAM V53C316516500 40 50 60 Max. RAS Access Time, tpAc 40 ns 50 ns 60 ns Max. Column Address Access Time, (V^aa) 20 ns 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (1pC)

Contextual Info: DO ATEL IN N O V A T IO N a n d E X C E L L E N C E _ BWR M O DELS Dual Output High-Reliability, 2" x 1" 7-10 Watt, DC/DC Converters It’s hard to b e a t th e co m b in a tio n o f low co st, sm all size sta n d a rd 2" x 1" x Features 0.3 75 " p a cka g e proven re lia b ility a nd o u tsta n d in g e le ctrica l p e rfo rm a n ce offe re d

bc 103 transistor

Abstract: transistor BC 176 bc 201 transistor bc 1602 l transistor bc 103 TRANSISTOR BC 203 low noise transistor bc 179 transistor BC 172 transistor bc 102 bc202
Contextual Info: ESC D • ô235bDS 000412b 1 ■ S IE G ; PNP Silicon Transistors 04126 - 25C SIEMENS A K T IE N G E S E LLS C H A F ° BC201 “T * — BC 203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and

ecg107

Abstract: AV13 ECG1131 T-77 GBU 08
Contextual Info: PHILIPS E C G INC 17E t.bS3T50 • • • • • • • • e TV C H RO M A SIG N A L AM PLIFIER T V Chroma S ig n a l A m p lif ie r Function A C C A m p lifie r Chroma S ig n a l A m p lifie r Burst G a te A m p lifie r A C C Peak D e te cto r C o lo r K ille r

Contextual Info: M OSEL VITELIC V53C311640500 3.3 VOLT 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C311640500 50 60 70 Max. RAS Access Time, Orac 50 ns 60 ns 70 n Max. Column Address Access Time, 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, PC)

Contextual Info: IBM11T2645HP I = 2M X 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 2Mx64 Extended Data Out SO DIMM • Performance: -60 -6R -70 tRAC ; RAS Access Time 60ns 60ns 70ns tcAc CAS Access Time

lt 719

Abstract: SPT7730 SPT7730SCS SPT7730SCU
Contextual Info: @ SPT s ig n a l p r o c e s s in g Te c h n o l o g ie s SPT7730 _ 8-BIT, 3.0 MSPS, SERIAL OUTPUT A/D CONVERTER 2 FEATURES APPLICATIONS • • • • • • • • • • • • 8-Bit, 1 kHz to 3.0 MSPS Analog-to-Digital Converter M onolithic CMOS

Tundra 8085

Abstract: ta 8259 8085 timing diagram for interrupt 8086 interrupt structure Service mode tv CA80C85B CA82C59A CA82C59
Contextual Info: TUNDRA CA82C59A PROGRAMMABLE INTERRUPT CONTROLLER • Pin and functional compatibility with the industry standard 8259/8259A • Fully static, high speed design 10 & 8 MHz • Compatible with 8080/85,8086/88,80286/386 and 68000 family microprocessor systems

m5m5110

Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

Contextual Info: h m m Chatêworth, CA m M ic n o s e m i Prog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • 1 Amp Silicon Rectifier 50 to 1000 Volts Low Cost Low Leakage Low Forward Voltage Drop

TCA 365

Abstract: PCM30 PDH system 178 08T Bipolar IC For Switching Power Supply Contro c22e LOF atm PMC saturn 78P7200 PCM30 PM4341 PM6341
Contextual Info: S tandardProduct I I / IV — PMC-Sierra, Inc. ISSUE 5 PM7345 S/UNI-PDH SATURN User Network Interface forPDH FEATURES Implements the ATM Direct Cell Mapping into DS1, DS3, E1, E3 transmission systems according to ITU-T Draft Recommendation G.804. Implements the Physical Layer Convergence Protocol PLCP for DS1 and DS3

Contextual Info: Integrated Circuit Systems, Inc. ICS9148-08 Frequency Generator & Integrated Buffers for PENTIUM/Pro General Description Features The ICS9148-08 generates all clocks required for high speed RISC or CISC microprocessor systems such as Intel PentiumPro or Cyrix. Eight different reference frequency

Contextual Info: MODEL T18 Cermet Trimmers 3/4" [19.05m m ] Rectangular, M ultiturn Industrial Grade FEATURES • • • • • 0.75 watt at + 70°C 3/4" [19.05mm] rectangular Fully sealed container Logarithmic taper available Low contact resistance variation ELECTRICAL SPECIFICATIONS

EPX880-10

Abstract: altera epx740
Contextual Info: FLASHIogic Programmable Logic Device Family Features. • ■ Prelim inary Information ■ ■ ■ Formerly Intel's FLEXlogic iFX family High-performance programmable logic device (PLD) family SRAM-based logic w ith shadow EPROM or FLASH memory elements fabricated on 0.6- and 0.8-micron CMOS technology