124NS Search Results

Contextual Info: STI642004G1 -70 VG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 1 1 tCAC 70ns 20ns *RC ^HPC 124ns 30ns The Simple Technology STI642004G1-70VG is a 2M x 64 bits Dynamic RAM high density memory module. The Simple

Contextual Info: STI641004G1-70SVGS 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DlMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: • • • • • • • • • • • *RAC ^CAC ‘ rc *HPC 70ns 20ns 124ns 30ns The Simple Technology STI641004G1-70SVGS is a 1M x 64

Contextual Info: IBM11S2325H 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 rac RAS Access Tim e 60ns 70 ns tc A G CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e

Contextual Info: IBM11S2325L 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 Irac RAS Access Tim e 60ns 70 ns tcAG CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e

KM416v1204at

Abstract: KM416V1204AT-7
Contextual Info: STI641004G1-70VG 144-PIN SO-DIMMS 1 M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: t RAC j t CAC *RC 70ns 20ns 124ns The Simple Technology STI641004G1-70VG is a 1M x 64 bits Dynamic RAM high density memory module. The Simple

edo dram 60ns 72-pin simm

Abstract: simm EDO 72pin edge connector sl36 edo ram 72pin edo dram 60ns 72-pin simm 32mb 4C32M4F-A60C "32mb x 36" simm edo dram 72-pin simm 32
Contextual Info: SL36 S/T 4C32M4F-AxxC 32M X 36 BITS DRAM SIMM with EDO and Optimized for ECC FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL36.-A60C 60ns 15ns 104ns 25ns SL36.-A70C 70ns 20ns 124ns 30ns The SiliconTech SL36(S/T)4C32M4F-AxxC is a 32MB x 36 bits

Contextual Info: IBM11S2325L 2M x 32 SODIMM M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • -60 -70 W c RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/kA Access Time From Address 30ns 35ns tRC Cycle Time 104ns 124ns

Contextual Info: IBM11S1325L 1 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 I rac RAS Access Tim e 60ns 70 ns tcA G CAS Access Tim e 15ns 20 ns Ua A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e 104ns 124ns

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

DC244

Contextual Info: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS

MSC2323258D

Contextual Info: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a

34S71

Abstract: 005D C1005D
Contextual Info: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

Contextual Info: Integrated Circuit Systems, Inc. ICS1890-2 100Base-TX PHYceiver for Repeater Applications General Description Features The ICS1890-2 is a fully integrated physical layer device supporting lOOMb/s only CSMA/CD Fast Ethernet Repeater applications. It is designed meet the specific requirements of

Contextual Info: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden

Contextual Info: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)

Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !

Contextual Info: IBM11T1645LP IBM11T1645NP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCc pins

DG34B

Contextual Info: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

CS53

Abstract: MSC23V13258D-70BS2 MSC23V13258D-XXBS2
Contextual Info: M SC23V13258D-xxBS2 98.3.12 OKI semiconductor MSC23V13258D-xxBS2 . 1,048,576 Word X 32 Bit DYNAMIC RAM MODULE D E S C R IP T IO N The Oki MSC23V13258D-XXBS2 is a fully decoded, 1,048,576-word X 32 bit CMOS dynamic random access memory composed of two 16-Mb (1 Mx16) DRAMs in TSOP packages. The mounting of two DRAMs together with

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

km416c254b

Contextual Info: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

MSC23V43257D

Abstract: MSC23V43257D-50BS8 MSC23V43257D-60BS8 MSC23V43257D-70BS8
Contextual Info: This version: Apr. 13. 1999 Semiconductor MSC23V43257D-xxBS8 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an