MSM514260 Search Results

Contextual Info: PJDD514260ESL-01 作成 ：2001 年 1 月 1電子デバイス MSM514260E/ESL 暫定 262,144-Word x 16-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM514260E/ESL はCMOS プロセス技術を用いた 262,144 ワードx16 ビット構成のダイナミッ

Contextual Info: O K I Sem iconductor MSM514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260B/BSL is a 262,144-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 514260B/BSL achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal C M O S. The M SM 514260B/BSL is

MSM514260C

Abstract: MSM514260CSL
Contextual Info: E2G0026-17-41 ¡ Semiconductor MSM514260C/CSL ¡ Semiconductor This MSM514260C/CSL version: Jan. 1998 Previous version: May 1997 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260C/CSL is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate

MSM514260

Abstract: SM5142
Contextual Info: • O K I S em iconductor MSM5 14 2 6 0 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514260B /BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. ITie MSM514260B/BSL is

Contextual Info: O K I Semiconductor MSC23B33-XXBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-word x 32-bit CM OS Dynamic Random Access Memory Module com posed of four 4-Mb DRAM s in SOJ MSM514260 packages mounted with two 0.2 (J.F

Contextual Info: E2G0026-17-41 O K I Semiconductor Previous version: M ay 1997 M SM 514260C/CSL 262,144-Word x 16-Bit DYNAMIC RAM : FA ST PAGE MODE T Y P E DESCRIPTION The MSM514260C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514260C/CSL achieves high integration, high-speed operation, and

RE52

Abstract: CCA-5 MAS 10 RCD MSM514260 FKS3
Contextual Info: O K I Semiconductor MSC23B33-xxBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-word x 32-bit CM OS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs in SOJ MSM514260 packages mounted w ith two 0.2 |iF

MSM514260E

Contextual Info: Semiconductor This version:Aug.2000 MSM514260E 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260E is a 262,144-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki

MSM514260E-60J3

Abstract: OKI PACKAGE INFORMATION PB
Contextual Info: Semiconductor This version:Aug.2000 MSM514260E 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260E is a 262,144-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki

Contextual Info: O K I Semiconductor MSM5 14260A/ASL 262,144-Word x 16-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM514260A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514260A/ ASL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM514260A/ASL is

MSM514260ESL

Abstract: PEDD514260ESL-01
Contextual Info: PEDD514260ESL-01 This version : Jan. 2001 Semiconductor MSM514260E/ESL Preliminary 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260E/ESL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E/ESL achieves high integration, high-speed operation, and low-power

MSM514260CSL

Contextual Info: E2G0026-17-41 O K I Semiconductor M S M 5 1 4 2 6 C / C S P revious version: M ay 1997 L ~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D E S C R IP TIO N The MSM514260C/CSL is a 262,144-word x 16-bit dynam ic RAM fabricated in Oki's silicon-gate

ZIP40-P-475

Contextual Info: 9 O K I Semiconductor MSM5 14260A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260A / ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. MSM514260A/ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514260A/ASL is

met esso

Abstract: MSM514260
Contextual Info: O K I Semiconductor MSC23B27-xxBS2/DS2 262,144-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC23B27-xxBS2/ DS2 is a fully decoded 262,144-word x 32-bit CM OS Dynamic Random Access Memory Module composed of two 4-M b DRAMs in SOJ MSM514260 packages m ounted with two 0.2 |xF

514260

Abstract: PA 0016 514260A zip40 ZIP40-P-475
Contextual Info: O K I Semiconductor MSM5 1 4 2 6 0 A/ASL 262,144-W ord x 16-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514260A/ASL is OKI's CMOS silicon gate process

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

514260

Contextual Info: O K I Semiconductor MSM5 1 4 2 6 0 /SL_ 262,144-Words x 16-Bits Dynamic RAM: Fast Page Mode Type DESCRIPTION The M SM 514260/SL is a new generation dynam ic RAM organized as 262,144 w ords by 16 bits. The technology used to fabricate the M SM 514260/SL is OKI's CM OS silicon gate process technology.

msm7630

Abstract: 0xF8000004 MSM7630GS-BK QFP100-P-1420-0 MSM7576 mc14573 0xF800001C 0xD0000000-0xDFFFFFFF circuit diagram of msm7630 MSM27C1602
Contextual Info: DATA SHEET ¡ MSM7630 Universal Speech Processor SECOND EDITION ISSUE DATE : JAN. 1999 E2Y0002-29-11 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

MSM514260

Abstract: MSM514260CSL msm514260c
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22