ATR80 Search Results

mt4c4001

Abstract: MT4C4001-6 TC51440 20PIN MT4C4001-10 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10
Contextual Info: 235 - 4M CMOS X íiSícffl m % ît £ °C TRAC max (ns) TRCY (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 4) Í TCAD min (ns) 2 0 P I N ¡if. TAH min (ns! TP min (ns) TWCY min (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (raA) À I DD STANDBY

TC5118160AJ

Contextual Info: TOSHIBA TC5118160AJ/AFT-70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5118160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

ASJ-10

Abstract: ATR10 ATR80
Contextual Info: - 230C M O S X Ä m £ tt £ CO -f- >• D y y ft tt TRAC max ns TRCY min (ns) TCAD min (ns) TAH min (ns) TP min ¡ns) n C 3 m R A M ( 4 1 9 4 TDH mir (ns) TRWC nin (ns) V D D or V C C (V) 4 X 1 ) Â m M HCÏ min (ns) 3 I DD max (mA) CL O CM 4 M I DD STANDBY

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

514400A

Abstract: ATR80 514400AZ ATR60
Contextual Info: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514400AP/AJ/ASJ-60,-70,-80 TC514400AZ/AFT/ATR-60,-70,-80 TENTATIVE DATA 1,048,576 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The T C 514400A P /A J/A SJ/A Z /A FT /A T R is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6

S1-A13

Abstract: foxconn compal ATR-80 Socket AM2 Compal Electronics NVIDIA schematics la-1611 Intel 845PE foxconn mPGA478
Contextual Info: A B C D E 1 1 Manchester 200Z LA-1731 REV 1.0 Schematics Document 2 2 Intel Pentium 4 Processor it the 478-pin Package with 845PE / ICH4 chipset 3 3 4 4 Title Compal Electronics, Ltd. Cover Sheet Size B D ate: A B C D Document Number R ev 1.0 LA1731 ¬P 期二, 十二月 31, 2002

Contextual Info: 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

AFT 518

Abstract: A518 A531 a539 KAS 34
Contextual Info: TOSHIBA TC5116180AJ/AFT-60/70/-80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

AX. A431

Abstract: TC5118160A TOSHIBA 5118160 TC5118160AJ 5118160AJ
Contextual Info: TOSHIBA TC511816QAJ/AFT -70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The T C 5118160 AJ/A FT is the new generation dynam ic RAM organized 1,048,576 word by 16 bit. The TC5118160A J/A FT utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation