TC511665 Search Results

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

tc511665

Abstract: TC511665BZ toshiba TC511665BJL
Contextual Info: TENTATIVE DATA 65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511665BJL/BZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665BJL/BZL utilizes TOSHIBA’S CMOS Silicon gate process technology a s well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

Contextual Info: T EN TA TIVE D A T A 65,536 W O R D x 16 BIT D Y N A M IC R A M DESCRIPTIO N The TC511665BJL/BZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665BJL/BZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

Contextual Info: 6 5,5 36 W O RD X 16 BIT D Y N A M IC R AM * T his is advanced information and specifica­ tions are subject to chan ge w ith out notice. DESC RIPT IO N The TC511665JL/ZL is the new generation dynam ic RAM organized 65,536 words by 16 bits. The TC511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: 6 5 ,5 3 6 W O R D X 16 BIT DY NAM IC RAM * T his is advanced inform ation and specifica­ tions are subject to change w ithout notice. DESCRIPTION The TC511665J^. is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

iw16

Contextual Info: T C 5 1 1 6 6 5 J L / Z L - 8 0 , 6 5 ,5 3 6 WORD x 16 BIT DYNAMIC RAM * T C 5 1 1 6 6 5 J L This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION T h e T C 5 1 1 6 6 5 JL /Z L is the n ew g e n e ra tio n d y n a m ic R A M o rg a n iz e d 6 5 ,5 3 6 w ord s by 16 b its. T h e

Contextual Info: INTEGRATED CIRCUIT TOSHIBA T O S H IB A M O S D IG IT A L INTEG R ATED CIRCUIT T C 5 1 1665J / Z - 8 0 , T C 5 1 1 665J / Z - 1 0 TECHNICAL DATA 65,536 W O RD x SILICON GATE CMOS * This is advanced information and specifica­ tions are subject to change without notice.

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

7A07

Abstract: w9109 jcs5 tc511665
Contextual Info: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica­ tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit