HY514400A Search Results

Contextual Info: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.

Contextual Info: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.

Contextual Info: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

HY514400A

Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
Contextual Info: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

mr 6710

Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
Contextual Info: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide

HYM532200

Contextual Info: •HYUNDAI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200Ais a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting o f sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iFdecoupling capacitor is mounted for each ORAM.

57210

Contextual Info: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on

HYM5361

Abstract: HYM536100AMG hym536100
Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling

Contextual Info: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.

Contextual Info: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

HYM536100A

Contextual Info: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling

Contextual Info: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.

Contextual Info: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

HYM536200AM

Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling

512kx4

Abstract: 7150M
Contextual Info: HY514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.

Contextual Info: «MYU1IDAI • HY514400A 1Mx4, Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

HYM532100

Contextual Info: HYM532100 N-Series ‘ H YU N D A I 1M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page m ode CMOS DRAM m odule consisting of eight HY514400A in 20/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22nF decoupling ca p a citor is

HYM536200AM60

Abstract: 00S11
Contextual Info: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536100AM

Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
Contextual Info: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina

Contextual Info: •HYUNDAI HYM540200 Series SEMICONDUCTOR 2M x 40-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM540200 Is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22,uF decoupling capacitor is mounted for each DRAM.

Contextual Info: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: -HYUNDAI HYC532200 Series 2Mx32 DRAM CARD DESCRIPTION The HYC532200 is the DRAM memory card consisting of sixteen HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in memory in the portable

HYM591000B

Contextual Info: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is