HYM5361 Search Results

HYM536100M

Contextual Info: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted

Contextual Info: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF

HYM5361

Abstract: HYM536100AMG hym536100
Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling

Contextual Info: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536100A

Contextual Info: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling

Contextual Info: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

HY5118160

Contextual Info: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

HYM536100AM

Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
Contextual Info: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina

Contextual Info: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling

HYM536120

Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling

ATMG

Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
Contextual Info: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HYM536100AM

Contextual Info: » H Y U N D A I H Y M 5 3 6 1 A M - S e r i e s 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5361OOA is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536100

Abstract: HYM536100M HYM536100MG HY531000 sIMM 72 module
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .22/ i F decoupling capacitor is mounted

HYM536120WG70

Abstract: HYM536120W70 HYM536120 HY5118160
Contextual Info: H Y M 5 3 6 1 2 0 W - S e r ie s IM I 36-bit CMOS DRAM MODULE - H Y U N D A I DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SQJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

HY5118160

Abstract: HYM536120 HYM5361 oec94 HYM53
Contextual Info: •HYUNDAI HYM536120 W-Series 1M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling

HY5118160

Abstract: hy5118160b 085016 HY531000
Contextual Info: “H Y U N D A I H Y M 53 612 0A W -S e r ie s _ 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a lM x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22 xF decoupling

HYM532814

Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Contextual Info: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2

HYM532814

Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Contextual Info: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .

HYM536100AM

Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Contextual Info: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.

st z7m

Abstract: SO DIMM 72-pin C5401 PI-33
Contextual Info: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC

Hyundai 2MX32 EDO simm module

Abstract: HYM532814 HYM53681 HYM5V72A3204
Contextual Info: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG

HY5118160JC

Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Contextual Info: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM

d 100 d

Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"