44C10 Search Results

KMM581000An-8

Contextual Info: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package

44c1000

Contextual Info: 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0

Contextual Info: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s

Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

TCA 290

Abstract: 41C1000 km44c1000aj 591000AN
Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

41C1000

Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Contextual Info: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and

SAB8051

Contextual Info: Security & Chip Card ICs SLE 44C10S 8-bit Security Controller with 9-Kbyte ROM, 256 byte RAM 1 Kbyte EEPROM and Sleep Mode Short Product Information 07.99 6/ &6 6KRUW 3URGXFW ,QIRUPDWLRQ 5HYLVLRQ +LVWRU\ &XUUHQW 9HUVLRQ  Previous Releases: 2.0 (06.98

km44c1000aj

Abstract: KMM581000AN
Contextual Info: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package

KM44C1000J

Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS

41C1000

Abstract: KMM591000AN 41C1000BJ
Contextual Info: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

Contextual Info: SAMSUNG ELECTRONICS INC b4E T> • 7=ib4mE 001331G 3SS ■ S M G K 44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1002A Is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.

44C1000AL

Contextual Info: 44C1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

gsm coding in c for 8051 microcontroller

Abstract: 44C10
Contextual Info: ICs for Chip Cards SLE 44C10S 8-bit Security Controller with 9-Kbyte ROM, 256-byte RAM 1-Kbyte EEPROM and Sleep Mode Short Product Information 04.96 Important: Further information is confidential and on request. Please contact: Siemens Semiconductor Group in Munich, Germany,

Contextual Info: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: PRELIMINARY 44C1010A CMOS DRAM 1 M X 4 Bit C M O S Dynamic R A M with Fast Page M ode Write Per Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C K M 4 4 C 1 0 1 0A- 7 70 ns 20 n s 13 0 n s K M 4 4 C 1 0 1 0A- 8 80ns 20 ns

Contextual Info: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC

Contextual Info: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0

Contextual Info: 44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 A is a high speed C M OS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C1003C

Abstract: 44C1003 RAS 2410
Contextual Info: CMOS DRAM 44C1003C/CL/CSL 1M x 4 B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: 44C1003C/CL/CSL-5 tR A C tC A C tR C 50ns 13ns 90ns 44C1003C/CL/CSL-6 60ns 15ns 110ns 44C1003C/CL/CSL-7 70ns 20ns 130ns

rb414

Abstract: KM44C1003
Contextual Info: 44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

74118

Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D
Contextual Info: 44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér

Contextual Info: DRAM MODULE KMM364C120CJ/CT KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1M x4,1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C120C consists of sixteen CMOS

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: 44C1012A-7 44C1012A-8 44C1012A-10 tnAC tcAc I rc

Contextual Info: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications