KM44C1000J Search Results

KMM581000N8

Contextual Info: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted

KMM581000N8

Contextual Info: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM41C1000AJ-1M

Abstract: km41c1000aj KMM591000N
Contextual Info: KMM591000N DRAM MODULES 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM591000N is a 1M bit x 9 D ynam ic RAM high de nsity m em ory m odule. The Sam sung K M M 5 9 1 0 0 0 N c o n s is t o f tw o 4M b it D R A M s

KM44C1000J

Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS

Contextual Info: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page