KM44C1010A Search Results

Contextual Info: PRELIMINARY KM44C1010A CMOS DRAM 1 M X 4 Bit C M O S Dynamic R A M with Fast Page M ode Write Per Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C K M 4 4 C 1 0 1 0A- 7 70 ns 20 n s 13 0 n s K M 4 4 C 1 0 1 0A- 8 80ns 20 ns

1010a

Contextual Info: PRELIMINARY KM44C1010A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES The Samsung KM 44C 1010A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbHlMS 00132^3 44b »SflGK KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fasi Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC I rc 70ns 20ns 130ns KM44C1010A-8 80ns 20ns

Contextual Info: PRELIMINARY CMOS DRAM KM44C1010A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: T h e S a m s u n g K M 4 4 C 1 0 1 0 A is a h ig h s p e e d C M O S tC A C 1 , 0 4 8 , 5 7 6 X 4 D y n a m ic R an d o m A c c e s s M e m o ry . Its

Contextual Info: KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM44C1010A is a CMOS high speed 1,048,576 b it x 4 D ynam ic Random A ccess M em ory. Its design is op tim ize d fo r high perform ance a p p lica tio n s

Contextual Info: KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM44C1010A is a C M OS high speed 1,048,576 b it x 4 D ynam ic Random A cce ss M em ory. Its design is o p tim ize d fo r high pe rform ance a p p lica tio n s

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

SJ08

Abstract: MCM54400A mn414400asj mcm514400 20PIN KM44C1000ASL-10 KM44C1002A-7 KM44C1010A-10 KM44C1010A-7 MN414400
Contextual Info: - 234 - 4M m £ ì& m m tt £ ro CMOS x TRAC max ns TRCY (ns) D y n a m i c RAM (1 0 4 8 5 7 6 X 4 ) € 'i 7 f TCAD rain (ns) TAH (ns) TP tir (ns) TOCY min (ns) TDH rain (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N M I DD isax (mA) À I DD STANDBY U SV 1SB 2)

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

KM416C256-7

Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
Contextual Info: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KM23C1010

Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10