KMM5322 Search Results

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

CX-53

Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
Contextual Info: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS

Samsung 2MX32 EDO

Abstract: Samsung 2MX32 EDO simm module
Contextual Info: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

24w04

Abstract: KMM5322100BK
Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification

KMM5322204C2W

Abstract: KMM5322204C2WG
Contextual Info: DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW/CWG to KMM5322204C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

km416c1204aj

Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The

Contextual Info: SAN SUN G E L E C T R O N I C S INC b7E D 7 Tb4145 KMM532256CV/CVG 0 0 1 S034 TSQ • SMGK DRAM MODULES 256Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532256CV is a 256K b itsx3 2 Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM5322204C2W/C2WG 2Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW /CWG to KMM5322204C2W /C2W G caused by PCB revision .

Contextual Info: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

Contextual Info: DRAM MODULE KMM5322200CW/CWG KMM5322200CW/CWG with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322200CW is a 2M x32bits RAM high density memory module. The Dynamic • Part Identification Samsung

Contextual Info: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

KMM5322000BV-6

Abstract: KMM5322000BV6 kmm5322000b KMM5322000BV KMM532200 DU26
Contextual Info: KMM53: ’SÀVJlt BV/BVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5322000BV is a 2M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5322000BV consist of sixteen CMOS 1M x 4 bit

Contextual Info: DRAM MODULE 8 Mega Byte KMM5322000W/WG Fast Page Mode 2M x32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range' T he Sam sung K M M 5322000W is a 1M bit x 32 D ynam ic RAM high density m em ory module. The

KMM5322000AW

Contextual Info: DRAM MODULE_ 8 Mega Byte KMM5322000AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322000AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322000AW consists of four CMOS

KMM5322000C

Abstract: 44C10 KMm5322000cv KMM5322
Contextual Info: DRAM MODULE 8 Mega Byte KMM5322000CV/CVG Fast Pagek Mjbde 2Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5322000CV is a 2M bit x 32 • Performance Range: tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The Sam sung

mega 329

Contextual Info: DRAM MODULE 8 Mega Byte KMM5322200W/WG Fast Page Mode 2M x32 DRAM SIM M , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5322200W is a 2M bit x 32 D ynam ic RAM high density m em ory module. The

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KMM5322200C2W

Abstract: KMM5322200C2WG km416c1200
Contextual Info: DRAM MODULE KMM5322200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322200CW/CWG to KMM5322200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE

KMM5322104CKU

Abstract: KMM5322104CKUG
Contextual Info: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic • Part Identification

Contextual Info: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification