KMM53 Search Results

s - ck5t

Abstract: CA52
Contextual Info: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KMM5321000BV-7

Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns

Contextual Info: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • T T b H l H S 0 0 1 5 3 1 0 13T I SPIGK KMM5368000H/HG DRAM MODULES 8Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5368000H is a 8 M bits x 36 Dynam­ ic RAM high density memory module. The Samsung

KMM5361000/A

Contextual Info: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit

Contextual Info: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E 3 WÊ 7 ^ b 4 m 2 DGlSeflG b7E • SMGK DRAM MODULES KMM5364000H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: KMM5364000H-6 • • • • • • • tflA C tcA C Í rc 60ns 15ns

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

Contextual Info: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns

Contextual Info: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung

8Mx32 dram

Abstract: Samsung Capacitor sse
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The

Contextual Info: KMM536512W/WG DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W is a 512K bit x 36 Dynam­ ic RAM high density memory module. The Samsung KMM536512W consist of four CMOS 2 5 6K x18 bit

ic 74142

Contextual Info: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A

M53241

Contextual Info: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The