IGBT 60A Search Results

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

60M324

Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

60M324

Abstract: GT60M324 60M32
Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

RY 227 Tf 227 10A

Abstract: APT40GF120JRD IGBT 1200V 60A
Contextual Info: APT40GF120JRD 1200V 60A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

APT0406

Abstract: APT0502 APTGV75H60T3G
Contextual Info: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Q3 11 • Solar converter

Contextual Info: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3

Contextual Info: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:

Contextual Info: APT40GF120JRD A dvanced pow er T e c h n o lo g y 9 1200V 60A Fast IGBT&FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­ wheeling ultraFast Recovery Epitaxial Diode FRED offers superior

IGBT full bridge

Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
Contextual Info: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:

Contextual Info: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

8845 diode

Abstract: APT75GT120JRDQ3
Contextual Info: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT60DQ60

Abstract: APT60GT60JRDQ3 APT60M75L2LL
Contextual Info: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

Contextual Info: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT50GT120B2RDQ2G

Abstract: APT10078BLL 000241
Contextual Info: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

G8060

Contextual Info: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

30GT60BRD

Abstract: APT30GT60BRDG 30gt60br 30GT60B 30gt APT30GT60BRD
Contextual Info: 600V APT30GT60BRDG 55A APT30GT60BRD APT30GT60BRDG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined

LIN opto isolator

Abstract: SPM6G080-060D IC 4098
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 APT75GT120JRDQ3 1200V E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

LIN opto isolator

Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

20GF120

Contextual Info: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness