60M324 Search Results
60M324 Price and Stock
Toshiba America Electronic Components GT60M324InsulatedGateBipolarTransistor,60AI(C),900VV(BR)CES,N-Channel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT60M324 | 64,500 |
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GT60M324 | 52,000 |
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60M324 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A) |
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GT60M324 15mitation, | |
60M324Contextual Info: 60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A) |
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GT60M324 60M324 | |
60M324
Abstract: GT60M324 60M32
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GT60M324 60M324 GT60M324 60M32 |