SSM3K302T Search Results

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

SSM3K302T

Abstract: PD1700
Contextual Info: SSM3K302T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K302T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 131mΩ 最大 (@VGS = 1.8V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 m max (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V)

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Preliminary SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 134 mΩ max (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V)

SSM3K302T

Contextual Info: SSM3K302T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K302T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 131mΩ 最大 (@VGS = 1.8V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87 mΩ (max) (@VGS = 2.5V)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3