MRF421 Search Results

MRF421MP

Abstract: MT3FA B1182 CASE-211-11 MRF421 MRF421 equivalent MRF421 IN4997
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 MOTOROLA 0 0 ci 4 b 3 4 1 • NOTb T '-3 5 r: |3 MRF421 MRF421MP ■ SEMICONDUCTOR TECHNICAL DATA T h e R F L in e 100 W(PEP) - 3 0 MHz 2 RF POWER TRANSISTORS NPN SILIC O N NPN SILICON RF POWER TRANSISTOR . . . designed p r im a rily fo r a p p lic a tio n as a h ig h -p o w e r lin e a r a m p li­

CASE-211-11 MRF421

Abstract: adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421
Contextual Info: Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

MRF421 equivalent

Abstract: mrf421
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF421 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

MRF421MP

Abstract: MRF-421MP MRF421 transistor tic 698
Contextual Info: MOTOROLA SEMICONDUCTOR MRF421 MRF421MP TECHNICAL DATA The RF Line 100 W PEP - 3 0 MHz RF POWER TRANSISTORS NPN SILIC O N NPN SILICO N RF POWER TRANSISTOR . . . designed prim arily for application as a high-power linear ampli­ fier from 2.0 to 30 MHz. Specified 1 2.5 V o lt, 30 MHz Characteristics Output Power = 100 W (PEP)

Contextual Info: MRF421 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)45 I(C) Max. (A)20 Absolute Max. Power Diss. (W)290 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition)16 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MRF421

Abstract: transistor npn 100w amplifier CASE-211-11 MRF421 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: MRF421 The RF Line NPN Silicon Power Transistor 100W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • • • Product Image Specified 12.5 V, 30 MHz characteristics —

MRF421 equivalent

Abstract: CASE-211-11 MRF421 MRF421 arco 469 1N4997 100WPEP arco 466
Contextual Info: MOTOROLA Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

MRF421

Contextual Info: MRF421 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W PEP

MRF421

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF421 Designed primarily for application as a high-power linear amplifier from 2.0 Product Image to 30 MHz. Specified 12.5 V, 30 MHz characteristics —

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N6367

Abstract: MRF420 2N5847 MRF425 EB-32 complementary symmetry amplifier 2N5848 2N5849 F450A MRF8004 MRF460
Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. M otorola has selected 18 transistor/m odule chains fro m 1.5 to 6 0 0 W PEP o utp ut. A ll devices are designed, tested and optim ized fo r frequency ranges fro m 2 to 9 0 0 M H z. These devices are designed fo r yo u r advanced RF

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

2443 MOTOROLA transistor

Abstract: High-Power NPN Silicon Power Transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed prim arily for application as a high-pow er linear am plifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minim um Gain = 10 dB

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

CQ 20.000

Abstract: MRF421 equivalent MRF421 1N4997
Contextual Info: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP