EDI8L32512C Search Results

Contextual Info: ^EDI EDÌ8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM 512Kx32 CMOS High Speed Static RAM A W M O l D iF @ [R s i^ \T [ i Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit

8l32128c

Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: W Dl E0I8L32512C 512Kx3! SRAM Module E lE O R O iC CC96N& M C ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

dq08

Abstract: DSP96002 EDI8L24128C EDI8L32256C EDI8L32512C TMS320C32 PLCC weight 8l321
Contextual Info: EDI8L32512C White Electronic Designs 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns

Contextual Info: EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply

Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

PLCC weight

Abstract: DSP96002 EDI8L32512C DQ06 4 DQ04
Contextual Info: EDI8L32512C T NO 512K x 32 CMOS High Speed Static RAM DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

EDI8L32512C

Abstract: EDI8L32512C25AC
Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

8L32512

Abstract: block diagram of of TMS320C4X DQ04 dq09 512C d47d D310
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

EDI8L32512C

Abstract: 323DI
Contextual Info: EDI8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM mi 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, fourmegabit density Static RAM organized as a512Kx32 bit array. Four Chip Enables, Write Control, and Output Enable

block diagram of of TMS320C4X

Abstract: 8L32512
Contextual Info: EDI8L32512C 512Kx32 SRAM Module 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns The EDI8L32512C is a high speed, 5V, 16 megabit SRAM.

block diagram of of TMS320C4X

Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: EDI8L3265C White Electronic Designs T NO 64Kx32 CMOS High Speed Static RAM DESCRIPTION FEATURES The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array.  64Kx32 bit CMOS Static  Random Access Memory Array

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

TME 57

Abstract: EDI8L32256C
Contextual Info: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static

Contextual Info: EDI8L3265C ZE D Ì, S4Kx32 SRAM EtECWONC DOWNS NC. 64Kx32CMOSHigh Speed StaticRAM Features 64Kx32 bit CMOS Static The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array. Four Byte Selects, two Chip Enables, Write Control, and

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

EDI8L32512V

Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

MO-47AE

Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
Contextual Info: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns

EDI8L32512C

Abstract: EDI8L3265C EDI8L3265C12AC 64KX32 edi8l32256
Contextual Info: EDI8L3265C 64Kx32 SRAM Features T NO 64Kx32 CMOS High Speed Static RAM 64Kx32 bit CMOS Static Random Access Memory Array The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array. Four Byte Selects, two Chip Enables, Write Control, and

29f040b

Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
Contextual Info: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3

EDI8L32512C

Abstract: EDI8L3265C B503 F
Contextual Info: ^EDI EDI8L3265C 64Kx32 SRAM ELECTRONIC DESIGNS, INC 64Kx32 CMOS High Speed Static RAM Features 64Kx32 bit CMOS Static The EDI8L3265C is a high speed, high performance, four Random Access Memory Array megabit density Static RAM organized as a 64Kx32 bit •