3E3D114 Search Results

Contextual Info: ELECTRONIC DESIGNS INC ^ E D I 51E D • 3230114 0001235 032 ■ E L D _ E D I 8 4 2 5 6 C S Electronic DMlgra Inc. — — High Performance Megabit Monolithic SRAM 256KX4 Monolithic CMOS Static RAM High Speed

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

DODI151

Abstract: EDI8M8512C EDI8M8512LP
Contextual Info: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

A571

Abstract: EDI8M8257C EDI8M8257C25C6C
Contextual Info: EDI8M8257C Electronic Designs Inc. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional eq uivalence to the monolithic two megabit

A17-A18j

Abstract: 2555N
Contextual Info: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­

A844

Abstract: 80 pin simm flash programmer A943 D019 D020 D021 80 lead flash simm programmer Flash SIMM 80 programmer
Contextual Info: ^EDI _ EDI7F32512C High Performance Four Megabit Flash EEPROM [ P i i l BUD [M O T Features E L E C T R O N I C D E S I G N S IN C . 512Kx32 CMOS Flash EEPROM Module The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as

SDP3B

Abstract: mj03 MJ-03 PCMCIA FLASH CARD 10MB MN 5198 K SDP3BI 1431a aeg tt
Contextual Info: W D l ED I7P1 6x x x A T A /C F A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220M B • EDI's ATA Flash Memory PC Card series offers a full Compact Flash - 2MB to 24M B range of densities and packaging options. Ideal for solid

Contextual Info: _EDI8F81026C ^EDI Electronic Designs Inc. Commercial Eight Megabit SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout The EDI8F81026C is an 8 Megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory

CX329

Abstract: TME 57
Contextual Info: EDI8F32258C 256Kx32 SRAM Module 256Kx32 Static RAM CMOS, High Speed Module fe a tu re s 256Kx32 bit C M O S Static The EDI8F32258C is a high speed 8 megabit Static R A M Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times

TME 57

Contextual Info: M DI EDI8F82046C 2 MegxB SRAM Module ELECTRONIC DESIGNS N C 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout I,Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks