512KX32 Search Results

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

KM4132G512Q

Abstract: BA 59 04A F P SM 11039 sgram
Contextual Info: SGRAM MODULE KM M 965G112Q P N / KMM966G112Q(P)N 8MB SGRAM MODULE (1 Mx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 . i _ &prrranNre This Material Copyrighted By Its Respective Manufacturer

WS512K32-XXX

Contextual Info: WS512K32-XXX / EDI8C32512CA HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ 5 Volt Power Supply ■ Packaging ■ Low Power CMOS ■ Built-in Decoupling Caps and Multiple Ground Pins for Low

AM29F010

Contextual Info: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 512Kx32 and 512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: ^EDI EDI7C32512C _ ELECTRONIC DESIGNS, INC 512Kx32 Flash 512Kx32 High Speed Flash Module Features The EDI7C32512C is a high speed, high performance, sixteen megabit density Flash module, organized as 512Kx32 bits, containing four 512Kx8 die mounted in a package.

Contextual Info: ^EDI EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in

Contextual Info: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES  Access Times of 60, 70, 90, 120, 150ns  Low Power CMOS  Packaging  Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two

Contextual Info: a WPS4M 32-35MSC M/HITE /MICROELECTRONICS 4Mx32SRAM MODULE ADVANCED* FEATURES • ■ A ccess Tim e of 35ns ■ Packaging ■ B yte C ontrol Chip S elects Fully S ta tic O peration • No C lock or Refresh required • M o d u le is m a nufa cture d w ith eig h t 512Kx32 SRAM

Contextual Info: a WHITE /MICROELECTRONICS W PS512K32-XPJX 512Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 1 5 , 1 7 , 2 0, 2 5 n s ■ T TL C o m p a t i b l e In p u ts a n d C M O S O u tp u t s ■ P a c k a g in g ■ 5 V o l t P o w e r S u p p ly • 68 Lead, P la s tic PLCC, 2 5 . 1 5 m m 0 .9 9 0 inch sq u a re

Contextual Info: TT WHITE /MICROELECTRONICS 512Kx32 5V FLASH MODULE WPF512K32-XPJX5 PRELIMINARY* FEATURES • A cce ss Tim es of 60, 90ns C om m ercial and Industrial Te m p e ra tu re Ranges ■ Packaging 5 V o lt P rogram m ing. 5V + 10% Supply • 68 Lead, Plastic PLCC, 24.94 mm 0.982 inch square

Contextual Info: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

WS512K32V-XXX

Contextual Info: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20ns ■ Low Voltage Operation ■ Low Power CMOS ■ Packaging ■ Fully Static Operation: ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic

WS1M32-XG3X

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

df1818

Contextual Info: WED7F325ZXE5SJ-C/A 512Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 60, 90ns ■ Commercial and Industrial Temperature Ranges ■ Based on AMD: AM29F040B-xxEC ■ 5 Volt Programming. 5V ± 10% Supply ■ Packaging ■ Low Power CMOS, 500µA Standby

Contextual Info: '! i/VH IT E /M ICROELECTRONICS 512Kx32 SRAM MODULE WPS512K32V-XPJC AD VAN C ED * FEATURES • A ccess Tim es of 15, 17, 20, 25ns ■ TTL Com patible Inputs and CMOS Outputs ■ Low Voltage Operation: ■ Fully S tatic Operation: • 3.3V ± 10% Power Supply

Contextual Info: WHITE /MICROELECTRONICS 512Kx32 5V FLASH SIMM WPF512K32-90PSC5 PRELIMINARY* FEATURES • A cce ss Tim e o f 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as 512Kx32 • 80 pin S IM M ■ C om m ercial Te m p e ra tu re Range • The m o du le is m a n u fa c tu re d w it h fo u r 512Kx8 CMOS Flash

Contextual Info: W E l e c t r o n ic h it e D C e s ig n s W S512K32-XXX o r p o r a t io n 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns ■ TTL Compatible Inputs and Outputs ■ Packaging ■ 5 V o lt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: a WHITE /MICROELECTRONICS WF512K32-XXX5 512Kx32 5V FLASH M ODULE, SM D 5962-94612 FEATURES • A ccess Tim es of 70, 9 0 , 1 2 0 , 150ns ■ O rganized as 512Kx32 ■ Packaging ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Ranges • 66 -pin, PGA Type, 1.075 inch square, H erm etic

Contextual Info: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:

Contextual Info: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701

Contextual Info: ^EDI EDÌ8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM 512Kx32 CMOS High Speed Static RAM A W M O l D iF @ [R s i^ \T [ i Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit