8L321 Search Results

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

Contextual Info: EDI8L3265C White Electronic Designs T NO 64Kx32 CMOS High Speed Static RAM DESCRIPTION FEATURES The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array.  64Kx32 bit CMOS Static  Random Access Memory Array

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

8l32128c

Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

dq08

Abstract: DSP96002 EDI8L24128C EDI8L32256C EDI8L32512C TMS320C32 PLCC weight 8l321
Contextual Info: EDI8L32512C White Electronic Designs 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns

Contextual Info: EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply

PLCC weight

Abstract: DSP96002 EDI8L32512C DQ06 4 DQ04
Contextual Info: EDI8L32512C T NO 512K x 32 CMOS High Speed Static RAM DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

EDI8L32512V

Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

Contextual Info: W 8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The 8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

ADSP-21060L

Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Contextual Info: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

EDI8L32512V25AI

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

8L32512

Abstract: block diagram of of TMS320C4X DQ04 dq09 512C d47d D310
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

block diagram of of TMS320C4X

Abstract: 8L32512
Contextual Info: EDI8L32512C 512Kx32 SRAM Module 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns The EDI8L32512C is a high speed, 5V, 16 megabit SRAM.

architecture of tms320c3x

Abstract: TMS320C32 8L32128C EDI8L32128C EDI8L32256C EDI8L3265C TMS320 TMS320C3X flash
Contextual Info: EDI’s x32 MCM-L SRAM Family: Integrated Memory Solution for TMS320C3x DSPs APPLICATION REPORT: SPRA286 Tim Stahley Electronic Designs, Inc. Digital Signal Processing Solutions March 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

block diagram of of TMS320C4X

Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

Architecture of TMS320C4X

Abstract: Architecture of TMS320C4X FLOATING POINT PROCESSOR block diagram of of TMS320C4X Architecture of TMS320C4X FLOATING POINT PROCESS TMS320C4X TMS320C4X FLOATING POINT PROCESSOR block diagram dsp processor Architecture of TMS320C4X block diagram of of TMS320C4X architecture Architecture of TMS320C4X with diagram TMS320C40
Contextual Info: EDI’s x32 MCM-L SRAM Family: Integrated Memory Solution for TMS320C4x DSPs APPLICATION REPORT: SPRA288 Tim Stahley Electronic Designs, Inc. Digital Signal Processing Solutions March 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any