DQ09 Search Results
DQ09 Price and Stock
SMC Diode Solutions 11DQ09TADiode: Schottky rectifying; THT; 90V; 1.1A; DO41; Ufmax: 0.96V; tape |
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11DQ09TA | 4,795 | 1 |
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SMC Diode Solutions 31DQ09TADiode: Schottky rectifying; THT; 90V; 3.3A; DO201AD; Ufmax: 0.97V |
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31DQ09TA | 1 |
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Diodes Incorporated AP7343DQ-09FDZW-7- Tape and Reel (Alt: AP7343DQ-09FDZW-7) |
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AP7343DQ-09FDZW-7 | Tape & Reel | 40 Weeks | 3,000 |
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AP7343DQ-09FDZW-7 | 2,862 |
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Diodes Incorporated AP7343DQ-09FDUW-7LDO LOW VOLTAGE STANDARD W-DFN2020-6 T&R 3K - Tape and Reel (Alt: AP7343DQ-09FDUW-7) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AP7343DQ-09FDUW-7 | Tape & Reel | 24 Weeks | 3,000 |
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AP7343DQ-09FDUW-7 |
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Diodes Incorporated AP7343DQ-09W5-7- Tape and Reel (Alt: AP7343DQ-09W5-7) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AP7343DQ-09W5-7 | Tape & Reel | 40 Weeks | 3,000 |
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AP7343DQ-09W5-7 |
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DQ09 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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iei9Contextual Info: I 31 I File No.I 3 5 3 eri 04.3 ID I'D 1 lnsulator:ABS, UL94HB RoH S Compliant 4.9 CM 1 / SPECIFICATIONS 8.00 20.2 09.8 I I SHEET l< in 6.9 16.5 2.6 20.5 CN 7.9 30.5 15.8 10.4 in ro Color Gray Black Chrome Plated Beige DQ09C DQ09B P/N: DQ09G DQ09K CATEGORY |
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ul94hbdq09gdq09kdq09c+3 | |
AS8S512K3Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface |
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as8s2m32pec2mx32m0-47aeas8s2m32+1 | |
Memory
Abstract: FTS8L32512V
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fts8l32512v512kx32adsp-21060ladsp-21062l+5 | |
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Contextual Info: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, |
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Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM |
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edi8f32123c128kx32128kx128kx8+3 | |
socket am3 pinout
Abstract: socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture 80960RM
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80960rm80960jt32-bitsocket am3 pinout+3 | |
540LContextual Info: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative |
OCR Scan |
80960rm80960jt32-bit1710h+1 | |
LGA 1155 Socket PIN diagram
Abstract: LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error
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e3-1200aimq21lga 1155 socket pin diagramlga 1155 pin diagram+8 | |
MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
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edi8l32512v512kx32adsp-21062ltms320lc31+4 | |
100MHZ
Abstract: 133MHZ WED3DL644V
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wed3dl644v4mx644x1mx644mx16+3 | |
DDR400B
Abstract: HYS64D64020GDL PC2700 PC3200 DDR333 DDR333B DDR400
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hys64d64020200-pinl-dim-200-006ddr400b+6 | |
cmo 765
Abstract: GR-78 DDR200 DDR266A PC2100 10292003-DNYO-BD9L infineon ddr numbering
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hys72d16500gr-hys72d32501gr-10292003-dnyo-bd9lcmo 765+5 | |
EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
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edi8l32512v512kx32adsp-21060ladsp-21062l+6 | |
8l32128c
Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
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edi8l32512cdsp96002tms320c3xtms320c4x+8 | |
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Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory |
OCR Scan |
edi8l32512c512kx32dsp96002tms320c3x+4 | |
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Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p |
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hys72d32300hys72d64300hys72d64320hys72d128320+1 | |
DDR266A
Abstract: PC2100 PC2100R
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hys72d16500hrhys72d32501hrddr266apc2100+1 | |
i5336Contextual Info: Mobile 3rd Generation Intel Core Processor Family Datasheet – Volume 1 of 2 September 2012 Document Number: 326768-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS |
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i5336 | |
LHi 968
Abstract: CYNSE70032 CYNSE70128
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cynse7012883-mhzlhi 968cynse70032 | |
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Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20 |
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as8slc512k32pec512kx32m0-47aeas8slc512k32+1 | |
AE31
Abstract: 273328
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80960rs80960jt32-bitholf00+3 | |
CATERR
Abstract: 1155 PINmap lga115 SBDQ62 LGA 1155 Socket PINmap Platform Environment Control Interface lga1155 land intel LGA 1155 PIN diagram E3-1200 Design for an LGA1155 processor
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e3-1200disclaimerq21caterr1155 pinmap+7 | |
LGA 1155 Socket PIN diagram
Abstract: lga1155 cpu socket vid pins location LGA 1155 Socket PIN diagram 3rd i7-2600k intel pch i3-2100 lga 1155 lga1155 MXM 3.0 X8 pinout 1155 PINmap
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lga 1155 socket pin diagramlga1155 cpu socket vid pins locationlga 1155 socket pin diagram 3rdi7-2600k+6 | |
540-lead
Abstract: 273328
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80960rs80960jt32-bit1710h+3 | |