323DI Search Results

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS ¿fíühiba TM M 323DI 2 2 3 DI 1 20 4 8 W O R D x 8 B IT EPRO M N C H A N N E L S IL IC O N S T A C K E D G A T E M O S. “ p |^ | |^ | ” DESCRIPTION o n ly T h e T M M 3 2 3 D I is a 2 0 4 8 w o r d x 8 b it u lt r a v io le t

IVI323D

Abstract: TMM323DI TMM323DI-1 TMM323D JCS18
Contextual Info: • TOSHIBA MOS MEMORY PRODUCTS TM M 323DI T IS/IIVI3 2 3 D I 1 2048 W O R D x 8 B IT E P R O M N C H A N N f L S IL IC O N S T A C K E D G A T E M O S. “ DESCRIPTION o n ly T h e T M M 3 2 3 D I is a 204 8 w o rd x 8 b it u ltra vio let erasable and m em o ry.

S0014

Abstract: TME 57 256KX16 A1526
Contextual Info: ^EDI EDI8F16258C afCTOONC OESGNS. NC '256Kxie SRAM Module 256KX16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

soc toshiba

Abstract: TMM323D1 TMM323DI TMM323DI-1
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS Toshiba 323DI T M M 3 2 3 D I-1 2 04 8 W O R D x 8 B IT EPR O M N C H A N N E L S IL IC O N S T A C K E D G A T E M O S D E S C R IP T IO N T V 1 U 323!! 1 - , . : ,*• ^ 2 V ’ I', t lisMndUor P'.;./,-'-r : 1 V ' '1 1 n' 1

SDP3B

Abstract: mj03 MJ-03 PCMCIA FLASH CARD 10MB MN 5198 K SDP3BI 1431a aeg tt
Contextual Info: W D l ED I7P1 6x x x A T A /C F A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220M B • EDI's ATA Flash Memory PC Card series offers a full Compact Flash - 2MB to 24M B range of densities and packaging options. Ideal for solid

Contextual Info: ^EDI EDI88130CS Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

1025K-1152K

Abstract: 897K-1024K
Contextual Info: ^E D I _EDI7F82048C E le c t r o n ic D e s ig n s I n c . High Performance Sixteen Megabit Flash EEPROM ip ìe u ìd ìà ^ y 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module.

TME 57

Contextual Info: M DI EDI8F82046C 2 MegxB SRAM Module ELECTRONIC DESIGNS N C 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout I,Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks