4142 Search Results

km 1667

Abstract: KM732V696-13 KM732V696-15 KM732V6961
Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM Rev 0.0 ELECTRONICS 7*^4142 0G372b7 fllT This Material Copyrighted By Its Respective Manufacturer PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM 64K x 32 - Bit Synchronous Pipelined Burst SRAM FEA T U R ES G E N E R A L DESCRIPTIO N

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

KM68B261A-6

Abstract: KM68B261A-7 KM68B261A-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: 6 I 42865 3 L J 2 _ NOTES J L THIS CONNECTOR HOUSING FOR USE WITH TERMINALS; - .125/ 3.18 SPADE; I5C8-* & 43374-* I (4-PL MAX) - .250/(6.35) SPADE; 41422-3*5* (2-PL MAX) 2. MATERIAL; NYLON 6 / 6 , 94V-2. COLOR; NATURAL (WHITE/TRANSLUCENT) PER SMES-I28-A.

IRFr010

Contextual Info: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142

Contextual Info: 4142 Cord Sets www.schurter.com/pg07_2 OU T Power Supply Cord with Contour Power Mains Plug, Straight Contour plug Contour plug CEE 7 / XVII / DINCEE 7 / XVII / DIN 49406 49406 Description References We recommend for new applications the new type 2228

4142N

Contextual Info: Deltasheet BTS 4142N – BSP 550 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Ω Features • Short-circuit protection • Current limitation • Overload protection Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ

4142N

Abstract: GPS05560 VPS05163
Contextual Info: BTS 4142N Target data sheet Smart High-Side Power Switch 1 Channels: 1 x 200m
Features Product Summary
Short circuit protection Overvoltage protection Vbb AZ
Current limitation Operating voltage Vbb(on)
Overload protection On-state resistance RON 47

414256

Abstract: D414256 NEC 20PIN DIP
Contextual Info: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The

Contextual Info: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D 7=]L.4142 0 0 1 7 7 1 3 3S7 « S M G K PRELIMINARY KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25 ns Max. • Low Power Dissipation

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

Contextual Info: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0B GülQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung

Contextual Info: SAMSUNG ELECTRONICS INC MC79L05AC 42E D • 7^4142 000=1437 7 LINEAR INTEGRATED CIRCUIT 3-TERMINAL NEGATIVE VOLTAGE REGULATOR The MC79L05AC employs internal current limiting and ther­ mal-shutdown, making them essentially indestructible. FEATURES • •

KM44C1000

Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Contextual Info: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung

Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM SPECIFICATION REVISION HISTORY REV. NO. 0.0 SUMMARY DATE Initial Release 1997. 1. 29 • • • » • • • • • • • • Rev 0.0 ELECTRONICS • 7^4142 00372^7 AIT PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM

Contextual Info: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D | 7*^4142 0 0 0 7 a tt» 7 | NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage