IRFR01 Search Results

Contextual Info: PD-95065A IRFR014PbF IRFU014PbF • Lead-Free Document Number: 91263 12/10/04 www.vishay.com 1 IRFR/U014PbF Document Number: 91263 www.vishay.com 2 IRFR/U014PbF Document Number: 91263 www.vishay.com 3 IRFR/U014PbF Document Number: 91263 www.vishay.com 4 IRFR/U014PbF

Contextual Info: IRFR014 A d van ced Power MOSFET FEATURES B V DSS - 60 V Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 ho ♦ 0 .1 4 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V

IRFR014TRPBF

Abstract: IRFU014 IRFR014 SiHFR014 SiHFR014-E3 SiHFU014 SiHFU014-E3
Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 • Straight Lead (IRFU014/SiHFU014) Qgs (nC) 3.1 • Available in Tape and Reel Qgd (nC)

Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Surface Mount (IRFR014, SiHFR014) • Straight Lead (IRFU014, SiHFU014)

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252)

IRFR012

Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120

IRFR012

Contextual Info: IRFR010/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK L o w e r R ds ON Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tr u c tu r e

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

Contextual Info: IRFR010 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

irfb220

Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Contextual Info: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111

Contextual Info: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling

150D

Abstract: AN-994 IRFR014 IRFU014 diode 1123 d46a 9701 mosfet
Contextual Info: PD-9.701 A International \&ñ\ Rectifier IRFR014 IRFU014 HEXFET Power MOSFET Dynamic dv/dt Rating Surface Mount {IRFR014 Straight Lead IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements V d s s =60V ^DS(on) = 0 -2 0 Q

IRFR014

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR014 FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V

IRFR014TRPBF

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling

PD-95065A

Abstract: EIA-541 IRFR120 IRFU120
Contextual Info: PD-95065A IRFR014PbF IRFU014PbF • Lead-Free 1 IRFR/U014PbF 2 IRFR/U014PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999

POWER MOSFET N-Channel 230V

Abstract: IRFR014
Contextual Info: IRFR014 A dvanced Power MOSFET FEATURES ♦ B V DSS — 6 0 V Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 8 .2 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 60V

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 • Straight Lead (IRFU014/SiHFU014) Qgs (nC) 3.1 • Available in Tape and Reel Qgd (nC)

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 • Straight Lead (IRFU014/SiHFU014) Qgs (nC) 3.1 • Available in Tape and Reel Qgd (nC)

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

SiHFU014

Abstract: IRFR014 S10 diode IRFU014 SiHFR014 SiHFR014-E3
Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)

diode 1123

Abstract: 1RFU014 AN-994 IRFR014 IRFU014
Contextual Info: PD-9.701A International IRFR014 IRFU014 Rectifier HEXFET P ow er M O S F E T • • • • • • • Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements