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    Vishay Intertechnologies

    Vishay Intertechnologies SIHFR010-GE3

    Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFR010-GE3 1
    • 1 $0.80
    • 10 $0.53
    • 100 $0.44
    • 1000 $0.37
    • 10000 $0.35
    		Get Quote

    SIHFR010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s


    Original     		irfr010sihfr0102002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		irfr010sihfr010o-2522002/95/ec+22011/65/eu12-mar-12 PDF

    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		irfr010sihfr0102002/95/ec2011/65/eu+112-mar-12 PDF

    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		irfr010sihfr0102002/95/ec2011/65/eu+112-mar-12 PDF

    IRFR9012

    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		irfr010sihfr0102002/95/ec11-mar-11+1irfr9012 PDF

    MOSFET 7121

    Abstract: AN609 IRFR010 SiHFR010 1712-1
    Contextual Info: IRFR010_RC, SiHFR010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfr010sihfr010an6092433m+80564m1737u9554m2279m7246m29-oct-10mosfet 71211712-1 PDF

    IRFR9012

    Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s


    Original     		irfr010sihfr0102002/95/ec2011/65/eu+3js709a02-oct-12irfr9012 PDF

    S10 diode

    Abstract: IRFR9012 IRFR010 IRFU9012 SiHFR010 SiHFR010-E3
    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		irfr010sihfr010o-2522002/95/ec+518-jul-08s10 diodeirfr9012irfu9012sihfr010-e3 PDF