VDS25 Search Results

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

Contextual Info: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier

Contextual Info: INTERNATIONAL RECTIFIER bSE D 4Û 5 S 4S 2 O O l b E C n 4TT • INR Bulletin E2793 International [îôrIRectifier IRFK2P350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration ■ • • • High Current Capability. UL recognised E78996.

APT801R2cN

Abstract: C 632 S1M
Contextual Info: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q

Contextual Info: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

nK2647

Abstract: T151 2sk2647 N CH FET 600V 9A
Contextual Info: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P o w e r M O S F E T 2 SK 2 6 4 T - 0 1M R SPEC. No. Fuj i E l e c t r i c . Co., Ltd. This Specification is subject to change without notice. OATE DRAWN NAME APPROVED Fuji Electric C o jid CHECKED 12 Y 025T-R-004a

JJ SMD diode

Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF
Contextual Info: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature

72Z4

Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets
Contextual Info: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives

Contextual Info: PD-9.633A International HfH Rectifier IRLR110 IRLU110 HEXFET Power M OSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR110 Straight Lead (IRLU110) Available in Tape & Reel Logic-Level Gate Drive RDS<on) Specified at V gs =4V & 5V

Contextual Info: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel

Contextual Info: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)

Contextual Info: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE

IC A244

Abstract: 2SK950 schematic UPS ica
Contextual Info: 2SK950 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications Gate Drain Source • Switching regulators

2SK2469-01MR

Contextual Info: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET

2n2709

Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling

zvp3310a

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94 FEATURES * 100 Volt VDS # Rds , « , - » « ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS -100 V Continuous Drain Current at Tam^=25°C •d -140 mA Pulsed Drain Current ■dm

Contextual Info: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS

YTFP452

Contextual Info: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: SOLITRON DEVICES INC \ SFNF065D 70 DË^Û3t,ôbDE □ □□nflfc, 2 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS *0 IDM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 50 V Drain Current, Continuous @ Tc=25°C 4.0 A

transistor k79

Abstract: 2sk793
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A Ï Ï “ ^ E ~ | , 0 1 7 5 5 0 001I.7U, 3 99D D I S C R E T E /O PTO SEMICONDUCTOR 16766 D T -3 9 -1 3 TOSHIBA FIELD EFFECT TRANSISTOR 2S K79 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (ff-MOS) INDUSTRIAL APPLICATIONS