IRL530S Search Results

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive

JJ SMD diode

Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF
Contextual Info: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature

Contextual Info: IRL530S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)88 Minimum Operating Temp (øC)-55õ

AN609

Abstract: IRL530S SiHL530S
Contextual Info: IRL530S_RC, SiHL530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRL530

Abstract: IRL530S SiHL530S 91342
Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

930 diode smd

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive

IRL530S

Abstract: SiHL530S 91342 irl530st
Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

MOSFET 50V 100A TO-220

Contextual Info: 4055452 International E?R Rectifier PD-9.909 IIN R DD15fi5b Ô14 IRL530S b5E D INTERNATIONAL R E C T IF IE R HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

TO220-SMD

Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
Contextual Info: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SiHL620S

Abstract: 52a21
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

smd diode 1336

Abstract: DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016
Contextual Info: PD-9.562C International J& R \ Rectifier IRL530- HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on) Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

90980

Abstract: IRFI540G h6 SMD SMD BR 42
Contextual Info: I n t e r n a t i o n a l R e c t if ie r mm HEXFET " Power MOSFETS V BR DSS Drairt-to-Source BreakdownVoltage (Vohs) Put Number RdS<wi) On-Stata Resistan« (3) (Ohms) IßContinuous Drain Current 25"C 100°C (Amps) (Amps) row ) PD«Tc=25"C Max Power Dissipation

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES