91342 Search Results

Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

X2Y Capacitor

Abstract: X7R spice 500X43W474MV4 PH 68 52 PH 57 Johanson Dielectrics
Contextual Info: Johanson Dielectrics, Inc. • 15191 Bledsoe St. • Sylmar CA 91342 • Tel 818.364.9800 X2Y EMI FILTER CAPACITOR SPICE MODEL Rev: 05/21/2002 Dual-Line Application "A"and "B"are "through" traces. The X2Y EMI Filter Capacitor will not limit the current capacity of the trace.

IRF540NS D2PAK

Abstract: IRF540NL IRF540NS 3F smd transistor AN-994 IRF540N
Contextual Info: PD - 91342 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l D VDSS = 100V RDS on = 44mΩ G Advanced HEXFET Power MOSFETs from

IRF540NS

Abstract: IRF540NL 3F smd transistor IRF540NS D2PAK AN-994 IRF540N
Contextual Info: PD - 91342A IRF540NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF540NS Low-profile through-hole (IRF540NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.052Ω G Description

IRF540NS

Abstract: IRF540NL
Contextual Info: PD-91342A International Rectifier IÖR IRF540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF540NS • Low-profile through-hole (IRF540NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V

IRF540NL

Abstract: IRF540NS 3F smd transistor AN-994 IRF540N MOSFET IRF540n
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

IRF540NS

Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: Tm JOHANSON Radial Leaded HJgh Volage Chip Capaciois D E S C R IP T B N Johanson D ielectrics offers this series of c a p a c ­ ito rs s p e c ific a lly fo r a p p lic a tio n s re q u irin g h ig h e r w o rk in g v o lta g e ra tin g s s u c h as h igh

Contextual Info: High Voltage Surface Mount Chip Capacitors DESCRIPTION Johanson D ielectrics has developed this series o f h ig h v o lta g e s u rfa c e m o u n t c e ra m ic c h ip c a p a c ito rs s p e c ific a lly fo r c irc u its re q u irin g higher working voltage ratings. The product line

DESC 87106

Contextual Info: • ■ ■ Switch Mode Capacitors JOHANSON _ iï 1 ' DESCRIPTION Johanson D ie le c tric s offe rs th is se ries of ce ra m ic c a p a c ito rs fo r sw itch m ode p ow er s u p p ly SMPS o u tp u t filte rin g a p p lic a tio n s . T he se S M P S -M L C ’s

LM 474

Contextual Info: JOHANSON : X5R Ceramic Chip ; The X5R MLC series offers circuit designers a powerful combination of high capacitance, stable temperature performance, and miniature size. The very low ESR characteristics make them a good choice over tantalum chips of higher value in many applications. Well suited

MS33656-E4

Abstract: BEI Edcliff Instruments MS33656E4 subsea MS33656 seacon "Pressure transmitter" esis ups edcliff subsea pressure transmitter
Contextual Info: Model 6-15 SUBSEA Differential Pressure Transmitter BEI Edcliff Instruments Division The Model 6-15 Differential Pressure Transducer is specifically designed for use in such deep-water applications as Wellhead Measurement, MUX Control Systems, and Subsea Blowout Preventers.

MS33656E4

Abstract: BEI Edcliff Instruments bei 6-10 pressure transducer Pressure TransDUCER 4 WIRE pressure transducer Hirschmann HIRSCHMANN DIN 43650 form c PT1H-10-6P HIRSCHMANN DIN 43650 MS33656 edcliff transducer
Contextual Info: Model 6-10 General Purpose Pressure Transducer BEI Edcliff Instruments Division The Model 6-10 Pressure Transducer is uniquely designed for the broadest possible range of applications, including Process Control Systems, Natural Gas Production, Liquid Level Measurement, Gas Compressors, Lubrication Systems,

Johanson Dielectrics

Abstract: s41 050 S41-1210
Contextual Info: JOHANSON MemoryGUARD Surface Mount Chip Capacitors DESCRIPTION Johanson Dielectrics has developed the MemoryGUARD ® series of low profile Z5U ceramic chip capacitors specifically for memory de-coupling applications. These capacitors are offered in three standard EIA case sizes and

Johanson Dielectrics

Contextual Info: L .063 ± .008 W .032 ± .008 EB .010 ± .005 EB .020 ± .010 T .035 MAX PART NUMBER: 500R14W333KV4T CAPACITANCE: 33 nF CAPACITANCE TOLERANCE: K 10% RATED VOLTAGE: 50 VDC DIELECTRIC STRENGTH: 125 @ 25 TEMPERATURE COEFFICIENT: 15 % (-55 @ 50 mA. MAX TO + 125

T25/T25B/T53/T55

Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE STACKED CAPACITORS KEY FEATURES • For Use at Temperatures Up to 200°C • Rated Working Voltages from 50V to 2KV • Rugged Stack with Hi-Temp Lead-Attachment • MLC Designs Utilizing Military Grade Ceramics

500R11W103K

Contextual Info: ROHS COMPLIANT SPECIFICATIONS: ELECTRICAL CHARACTERISTICS: DIELECTRIC RATED VOLTAGE CAPACITANCE RANGE EIA CAPACITANCE TOLERANCE TEST PARAMETERS X7R 50 VDC 0.010 mFd (103) K (± 10%) 1 kHz ±50 Hz @ 1.0 VRMS, 25°C ±15% (-55°C TO +125°C) < 2.5% @ 1kHz, 25°C

itt capacitors

Contextual Info: 71E D JOHANSON • M^703ia 000033? 2ST Electrical Characteristics l i O NPO DIELECTRIC CHARACTERISTICS Typical Capacitance Change vs Temperature NPO capacitors feature Class 1dielectric and exhibit extremely stable characteristics over time, temperature changes, and applied voltage. Ideally suited for precision

Contextual Info: ?1E D • iH7fl31fl □00033b 313 16 von R07 0402 Inches (mm) .040 (1.02) Width .020 (0.51) Thick .025 (0.63) E/B .008 (0.20) Length R14 (0603) Inches (mm) Length .060 (1.50) Width .030 (0.75) Thick .035 (0.90) E/B .010 (0.25) R15 (0805) Inches (mm) Length

152s43w103zv6e

Abstract: marking 6
Contextual Info: ROHS COMPLIANT SPECIFICATIONS: ELECTRICAL CHARACTERISTICS: DIELECTRIC RATED VOLTAGE CAPACITANCE RANGE EIA CAPACITANCE TOLERANCE TEST PARAMETERS X7R 1500 VDC 10 nFd (103) Z (+80 / -20%) 1 kHz ±50 Hz @ 1.0 VRMS, 25°C ±15% (-55°C TO +125°C) < 2.5 % @ 1kHz, 25°C

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

Contextual Info: 71E JOHANSON D • 4 T 7 fl3 ia D00G35fci 101 ■ f t -0 5 -1 3 -0 5 LASERtrim Surface Mount Tuning Capacitors liL G APPLICATION: LASERtrim™ tuning capacitors are laser adjustable monolithic ceramic surface mount devices for precise functional tuning of RF circuits.

e59 11 045

Abstract: P0310 Marking Code E37
Contextual Info: www.johansondielectrics.com SWITCH-MODE CERAMIC CAPACITORS Switch-Mode ceramic capacitors feature large capacitance values and exhibit low ESR equivalent series resistance and low ESL (equivalent series inductance) making them well suited for high power and high frequency applications