A3BFLB02 Search Results

FTA50V

Abstract: er c128
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DE I A3bflb02 □OOE'ìl'ì 3 | ~ INC 95D 0 2 9 1 9 Ä1TÄ\[L Q ( Devices, Inc' MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum

125CV

Abstract: solitron rectifier
Contextual Info: SOLITRON DEVICES INC flbD D • A3bflb02 D0D53fl^ 0 SCHOTTKY RECTIFIERS SSD51 Solitran DEVICES, INC. POWER SCHOTTKY RECTIFIER 60 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING LOW CAPACITANCE HERMETICALLY SEALED VERY LOW FORWARD VOLTAGE DROP HIGH SPEED SWITCHING CIRCUITS

Contextual Info: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)

Contextual Info: PRODUCT CÂTÀLQQ_ J a W t x a n , N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0.85Q SDF13N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES

Contextual Info: Æwtion PRODUCT CÂTÂLÛi D EV I CE S. IN C. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 T E L : 407 8 4 8 - 4 3 J 1 • TLX: 51 -3435 • FAX: (407) 8G3-5946 800V, 9.0A, 1 . 4 0 ABSOLUTE MAXIMUM RATINGS PARAMETER

Contextual Info: M o [D )(y j ir © Ä T rÄ [L ( P -C H A N N E L E N H A N C E M E N T D U A L M O S FET mm CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .026" (0.660mm) 12,000 Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS -035" (0.889mm)

2SC1172

Abstract: SOLITRON DEVICES
Contextual Info: MAE D SOLITRON DEVICES INC • 0Olitran Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2SC1172 TYPE: NPN S IL IC O N CASE: TO—3 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (VCE0) Voltage, Emitter to Base (VEB0) Collector Current (lc) .