KM684002 Search Results

pin diagram of 74112

Abstract: ttl 74112 pin diagram of ttl 74112 3B522
Contextual Info: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The

Contextual Info: Preliminary KM684002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA (CMOS): 10 mA Operating KM684002A-12 : 200 mA(Max.) KM684002A-15: 190 mA(Max.)

Contextual Info: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D 7=]L.4142 0 0 1 7 7 1 3 3S7 « S M G K PRELIMINARY KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25 ns Max. • Low Power Dissipation

Contextual Info: KM684002A CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Draft Data Remark Rev No. History Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996

Contextual Info: KM684002A CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 15,17,20* Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) (CMOS): 10«» (Max.) Operating KM684002A- 15 : 170««(Max.) KM684002A-17 : 165*»(Max.)

Contextual Info: CMOS SRAM KM684002B, KM684002BI Document T itle 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. R evision History RevNo. History Rev. 0.0 Initial release with Design Target. Draft Data Remark Jan. 1st 1997

Contextual Info: KM684002, KM684002E, KM684002I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: ADVANCE INFORMATION KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM644005J-15: 180mA (max.) KM644005J-20: 160mA (max.)

Contextual Info: KM684002/L CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby OTL) 60mA (Max.) (CMOS) 3mA (Max.) L-Ver : 500^ A (Max) Operating : KM684002-17: 180mA (Max.)

Contextual Info: CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st 1997 Design Target

KM684002

Abstract: KM684002E KM684002I KM684002J SRAM sheet samsung 323AD
Contextual Info: KM684002, KM684002E, KM684002I CMOS SRAM Docum ent Title 512K x8 B it H igh S peed S ta tic RAM 5V O pe ra tin g , R e v o lu tio n a ry Pin ou t. O perated at C o m m e rcia l, E xten ded and In d u s tria l T e m p e ra tu re Range. Revision History R ev No.

Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)

KM684002

Abstract: KM684002-17 KM684002-20 KM684002-25 KM684002E KM684002I KM684002J
Contextual Info: KM684002, KM684002E, KM684002I PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

Contextual Info: CMOS SRAM KM684002A, KM684002AE, KM684002AI 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20ns Max. • Low Power Dissipation Standby {TTL) : 50mA(Max.) (CMOS) . 10mA(Max.) Operating KM684002A -1 5 : 170mA(Max.)

Contextual Info: PRELIMINARY CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

vl 700-04

Contextual Info: KM684002A CMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory Draft Data R em ark Rev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM684002-17

Abstract: KM684002-20 KM684002-25
Contextual Info: CMOS SRAM KM684002/L 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 3mA (Max.) L-Ver : 500,» A (Max) Operating : KM684002-17 : 180mA (Max.)

vl 700-04

Abstract: kl block TTL-40
Contextual Info: Prelim inary CMOS SRAM KM684002B, KM 684002BI D o cu m e n t Title 512K x8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Rev No. H isto ry D raft Data R em ark

KM684002J

Abstract: KM644002J20
Contextual Info: KM684002/KM684002L CMOS SRAM 5 1 2 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10m A(Max.) 5Q0nA(max.)-L Ver Operating KM684002/L-17 : 180 mA(Max.)

Contextual Info: CMOS SRAM KM684002/L 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation (TTL) 60mA (Max.) Standby 3mA (Max.) (CMOS) L-Ver 500// A (Max) Operating : KM684002-17: 180mA (Max.) KM684002-20: 170mA (Max.)

KM684002J-25

Abstract: KM684002J-20 KM684002J-15 KM684002J KM684002J20
Contextual Info: PRELIMINARY CMOS SRAM KM684002 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25 ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) Operating KM684002J-15: 180mA (Max.)

Contextual Info: PRELIMINARY CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM684002/KM684002L CMOS SRAM 5 1 2 K x 8 B i t High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC)S):10mA(Max.) 500pA(m ax.)-L Ver Operating KM684002/L-17 : 180m A(M ax.)