KM44C1000B Search Results

KM44C1000

Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Contextual Info: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­

KM44C1000BLJ-7

Abstract: km44c1000blj6 KM44C1000BLT7 KM44C1000BLT-7 KM44C1000BLT6 1000BL KM44C1000BLT
Contextual Info: KM44C1000BL CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KMM581000BN

Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
Contextual Info: KMM581000BN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000BN co n sist o f two 4M b it DRAMs KM44C1000BJ 1 M x4 in 20-pin SOJ package mount­

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 KM44C1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its

KM44C1000BJ-7

Contextual Info: KM44C1000B CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns

KM44C1000BJ7

Abstract: KM44C1000BJ6 KM44C1000BJ-6 KM44C1000BJ KM44C1000BJ-7 KM44C1000B-7 KM44C1000BJ-8 KM44C1000BT-8 KM44C1000BZ-8 KM44C1000BT
Contextual Info: KM44C1000B CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

1Mx4

Abstract: 20-PIN KM44C1000BLT KM44C1002BJ
Contextual Info: M E M O R Y IC s FUNCTION G UIDE Dynamic RAM Continued Capacity 4 M bit Part Number Organization KM44C1000BZ 1Mx4 1Mx4 1Mx4 KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR 1Mx4 Speed(ns) CMOS Fast Page CMOS CMOS CMOS CMOS Fast Page Fast Page Fast Page

KM44C1000BJ6

Abstract: KM44C1000BJ7 KM44C1000BJ KM44C1000BJ-7 KM44C1000BT KM44C1000BJ-6 KM44C1000BP-7 km44c1000b
Contextual Info: KM44C1000B / CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tiuc tcAc tflC 60ns 15ns 110ns KM44C1000B-7 70ns 20ns 130ns KM44C1000B-8 80ns 20ns 150ns KM44C1000B-6 • • • • • • • •

Contextual Info: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN

KMM591000BN-6

Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
Contextual Info: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module

Contextual Info: KM44C1OOOBSL CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1 OOOBSL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KMM581000BN-6

Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
Contextual Info: SAMSUNG EL E C T R O N I C S INC b?E D • 7Tbm4E KMM581000BN DQ15ü7b 3ÖT M S I I G K DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung

KM44C1000BJ

Abstract: 4Mx1 4Mx1 nibble
Contextual Info: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ

Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung

20PIN

Abstract: KM41C4000AL-10 KM41C4000AL-8 KM41C4000ASL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4001A-10 KM41C4001A-7 KM41C4001A-8
Contextual Info: - 228CMOS 4 M m & X y 4 « wj&KES ît £ rc TRAC max TRCY inin ns) (ns) TCAD nin (ns) TAH min (ns) C D ynam R A M TWCY (ns) (ns) 1 9 4 % te TP min ( 4 TDH Bill (ns) TRWC ain (ns) V D D or V C C (V) 3 4 X 1 ) M ID D max (mA) 2 À I DD STANDBY (ISB/ISB2) (mA)

KMM581000BN

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung

KM416C256-7

Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
Contextual Info: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10