KM41C40 Search Results

Contextual Info: CMOS DRAM KM41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications

Contextual Info: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL-5 50ns 13ns 90ns KM41C4000C/CL/CSL-6 60ns 15ns 110ns KM41C4000C/CL/CSL-7 70ns 20ns 130ns KM41C4000C/CL7CSL-8

Contextual Info: CMOS DRAM KM41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

km41c4000

Contextual Info: KM41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications

KMM584000

Abstract: KM41C4000J
Contextual Info: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C4000A

Contextual Info: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KM41C4000BJ7

Abstract: KM41C4000BJ6 KM41C4000BJ km41c4000B KM41C4000BJ-6
Contextual Info: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAc tRC KM41C4000B-6 60ns 15ns 110ns KM41C4000B-7 70ns 20ns 130ns KM41C4000B-8 80ns 20ns

Samsung Capacitor sms

Abstract: km41c4000aj KM41C4000A
Contextual Info: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

a6ee

Contextual Info: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

Contextual Info: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications

Contextual Info: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power cons urn ption(Ncrmal or Low power), and

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications

km41c4000bj7

Abstract: KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8
Contextual Info: KM41C4000B CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications