1000BL Search Results

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I

Contextual Info: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60

KM44C1000BLJ-7

Abstract: km44c1000blj6 KM44C1000BLT7 KM44C1000BLT-7 KM44C1000BLT6 1000BL KM44C1000BLT
Contextual Info: 1000BL CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

SP20100

Abstract: SP2040 SP2060C SP2040C Sp20200
Contextual Info: WILLAS FM120-M+ SP2040C THRU THRU 20.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V ITO-220RECTIFIERS PACKAGE FM1200-M+ SP20200C Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 1000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60

km616u1000b

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16

Contextual Info: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 1000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

Contextual Info: BCM5500 PRODUCT Brief 10 GBPS SERIAL HIGH-SPEED TRANSCEIVER/BACKPLANE SERDES B C M 5 5 0 0 F E AT U R E S S U M M A R Y Serial Transceiver Supporting 1000B-CX, • Quad 1000B-LX, and 1000B-SX Full Duplex Operation O F B E N E F I T S • Enhanced IEEE 802.3z Ten Bit Interface TBI

YC 2604

Contextual Info: KM41C1000BI­ CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung 1000BL is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess Memory. Its de­ sign is op tim ize d fo r high pe rform ance ap p lica tio n s

2CMA142417R1000

Abstract: 1SCA022612R9990 OTP16HT 1SCA022401R0760 1SCA022340R1150 1SCA022400R9910 OTP16T3M 1SCA022276R9810 OTP16-63 OTP16H
Contextual Info: Low Voltage Products Switches Enclosed safety switches 16.1250A Plastic Front operated AC23A 400V, IP65 Black or red-yellow handle OTP16H OTP16-63 OTP75-90 OT125-1000 Poles A Poles A A A A Poles A A Poles A 3 4 6 16 - - 3 4 6 16 16 16 30 30 30 38 38 38 63

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996

100NSL

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6 im CMOS • Organization : 128K x8 • Power Supply Voltage : KM68V1000B family : 3.3V±0.3V KM68U1000B family : 3.0V±0.3V

KM616U1000B

Abstract: KM616V1000B KM616V1000
Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

KM68U1000BLG8L

Abstract: KM68V1000BLG7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.

OB35

Abstract: 511000BZ-60 BL-70 bzl60
Contextual Info: S IE M E N S 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 1000BL/BJL/BZL-60/-70 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

1000BL

Abstract: A7L714 keystone cat6 A A7J704 belkin patch cable 5E 12AB5 A7L704
Contextual Info: Home Log In/Register Track Your Order View Cart Belkin Wizards Where to Buy Product Registration About Us Press Room Contact Us Careers Search in products Belkin offers three series of copper cable and connectivity products. Copper Cables and Connectivity