68V1000B Search Results

KM68U1000BLG8L

Abstract: KM68V1000BLG7L
Contextual Info: 68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM 68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage 68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

Contextual Info: 68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tandby(C M O S ): 360nW (max.)L-Version

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

zd103

Abstract: 1A13 F-05 KM68V1000BLI
Contextual Info: 68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 7 0 ,100ns max. • Low Power Dissipation Standby(CMOS) : 360fjW (max.)L-Version

Contextual Info: 68V1000BLE / LE-L CMOS SRAM 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tand by(C M O S ): 360jiW (m ax.)L-Version

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: 68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage 68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V

Contextual Info: CMOS SRAM 68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

q0213

Abstract: KM68V1000BLE a14cz
Contextual Info: CMOS SRAM 68V1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SHAM FEATURES GENERAL DESCRIPTION 1Extended Temperature Range : -25 to 85°C ’ Fast Access Time : 70,100ns max. •Low Power Dissipation Standby(CMOS): 360p.W(max.)L-Version

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3,uW(Typ.) L-Versron 1.5^iWfTyp.) LL-Version Operating