A14CZ Search Results

CE5C

Abstract: CEA 243 A12C A14C ZZ1A18 6803 microprocessor pcetc
Contextual Info: DALLAS SEMICONDUCTOR CORP BTE D m 2 b l 4] i 3D Q0033t>E S 1 3 DAL 0S5340 n~'5Z-!>V 0.5 DS5340 V40 Softener Chip DJy.!LAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • Provides softness for V40-based systems • Adapts to task-at-hand: -Converts up to 672K bytes of CMOS

28C512

Contextual Info: Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Low Power CMOS Dissipation: -Active: 50 mA Max. -Standby: 500 jiA Max. ■ Simple Write Operation: -On-Chip Address and Data Latches -Self-Timed Write Cycle with Auto-Clear

HM628512

Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,

Contextual Info: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is

Contextual Info: •HYUNDAI •■ ■ » * * iii HY29F016 2Mx 8 bjt CMQS 5 Qv ^ n|y Sector Erase F[ash Memory Advanced Information DESCRIPTION The HY29F016 is a 16Mbit, 5.0V-only Flash memory organized as 2Mbytes of 8 bits each. The 2Mbytes of data is organized as 32 sectors of 64K bytes for flexible erase capability. The 8 bits of data will appear on DQ0-DQ7.

IA15

Contextual Info: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

M28F211

Abstract: M28F221
Contextual Info: M28F211 M28F221 SGS-THOMSON M g [Î3 iH iO T ® K !]r 2 Megabit (x 8, Block Erase FLASH MEMORY P R E L IM IN A R Y D A TA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: * ' Ü LL •«Mt r-1 >L* »f '•ì'-^ÌliÌ h #gfc.,K-.»,1&& yWtol „sS w?r t^t^SÉV’ » itK&m*I I FUJITSU SEMICONDUCTOR DATA SHEET D S05- 2 08 1 8- 1E FLASH MEMORY CMOS 2M 256K x 8 MBM29F002T/002B/002ST/002SB ■ DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase

Contextual Info: Æ 7 S G S -T H O M S O N ^ 7 # * RÆQiMtliLti^TrWiDigi M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS > 120ns ACCESS TIME FLASH and EEPROM blocks > WRITE, PROGRAM and ERASE STATUS BITS

Contextual Info: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415A Z Rev. 1.0 Dec. 25, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 |im CMOS process and high speed circuit designing

S1757

Contextual Info: S C S 'IH O M S O N M27W402 û ^ O ^ ô i[L i© W (Q )K iia (g i VERY LOW VOLTAGE 4 Megabit (256K x 16) UV EPROM and OTP EPROM PRELIMINARY DATA VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V FAST ACCESS TIME: 150ns LOW POWER "CMOS” CONSUMPTION: - Active Current 15mA

Contextual Info: o Prelim inary U N IT R O D E bq4311Y/L 32Kx8 ZEROPOWER NVSRAM General Description Features >• Integrated u ltra low-power SRAM, power-fail control circuit, and battery ► Automatic power-fail chip dese­ lect and write protection ► 4.5 to 5.5V operation bq4311Y

Contextual Info: Features M ËT • Fast Read Access Time - 70 ns • 5-Volt Only Reprogramming • Sector Program Operation - Single Cycle Reprogram Erase and Program - 512 Sectors (128 words/sector) - Internal Address and Data Latches for 128 Words • Internal Program Control and Timer

65V8512LFP-15

Abstract: 65V8512LFP 65V8
Contextual Info: HM65V8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-400E Z Rev. 5.0 Jul. 26, 1995 Description The Hitachi HM65V8512 is a CMOS pseudo static RAM organized 524288-word x 8-bit. It realized low power consumption by employing 0.8 (im Hi-CMOS process technology.

CE1301

Contextual Info: SO NY CXK59290M/TM -7 0 1 7 1 0 1 7 1 2 L 32768-word x 9-bit High Speed CMOS Static RAM Description The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is suitable for use in high speed and low power

HN58V1001

Abstract: DP-32 HN58V1001FP-25 HN58V1001P-25 HN58V1001R-25 HN58V1001T-25 03CZ Hitachi Scans-001
Contextual Info: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability. For applications where

n25Z

Abstract: Z17D A3ZD
Contextual Info: M29W800T M29W800B SGS-THOMSON 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10(is by Byte / 1 6|.is by Word typical

SGS M27C2001

Abstract: B2A PCB Hex 1N914 IA10 M27C2001 M27V201 PLCC32 TSOP32
Contextual Info: rZ J ^ 7 M . S C S -T H O M S O N M27V201 6 » iio » [iiL i g ? [g ( B R !io ( g i LOW VOLTAGE 2 Megabit (256K x 8) UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 200 and 250ns ■ LOW POWER ’’CMOS" CONSUMPTION: