28C512 Search Results

28C512

Contextual Info: Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Low Power CMOS Dissipation: -Active: 50 mA Max. -Standby: 500 jiA Max. ■ Simple Write Operation: -On-Chip Address and Data Latches -Self-Timed Write Cycle with Auto-Clear

28C513

Abstract: 28C512 CAT28C512 1N914 CAT28C513
Contextual Info: H EE GEN FR ALO 28C512/513 512K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

28c512

Abstract: 28 pin 28c512 1N914 CAT28C512 CAT28C513 PARALLEL E2PROM
Contextual Info: C= L _ V " S T " Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P age Load Timer ■ Low Power CMOS Dissipation: -Active: 50 mA Max.

28C513

Abstract: qml-38535 28C512 5962-E079-07
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R114-92. glg 92-01-22 Michael A. Frye B Changes in accordance with NOR 5962-R160-98. glg 98-08-06 Raymond Monnin C Boilerplate update and part of five year review. tcr

28c512

Abstract: AT28C512 28 pin 28c512 28c5 A15CZ
Contextual Info: C = L _ V " S T " Advanced 28C512/513 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive : 50 mA Max. -S tan d b y: 500 |iA Max.

28c512

Abstract: CAT28C512 1N914 CAT28C513
Contextual Info: Advanced 28C512/513 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max.

26c512

Abstract: 28C512
Contextual Info: iwixie UUU3 0UUUUffD\n=SirU U— M X26C512 S I 2 K - B IT IB 4 K X 8 ] C M O S M U L T IP L E -T IM E - P R O G R /V IV /IIV /IA B I- E R O M FEATURES • • • • • • • Operating current: 30mA Standby current: TOOjiA 100 minimum erase/program cycles

28C512

Abstract: free circuit eeprom programmer 28C513 28C51
Contextual Info: 28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max. ■ End of Write Detection:

CAT28C512

Abstract: 28C512 1N914 28C513 CAT28C513
Contextual Info: H EE GEN FR ALO 28C512/513 512K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.

28c512

Abstract: 28 pin 28c512 CAT28C512 1N914 CAT28C513
Contextual Info: Preliminary 28C512/513 Preliminary 28C512/513 512K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.

29C257

Abstract: gang capacitor pin details 27LV020 27c4000 ST 27C1000 29F040A 29C010A Winbond 29EE011 Xicor 28C010 29F020
Contextual Info: file:///AD63.HTM ADSl/63 U c a q ?^ TI o PRODUCT DATA SHEET p AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) Product Code ¡Pins on skt Pins on Base ¡Wiring Code Package Base pitch" ¡Miscellaneous AD63 i 32 : 32 j 01 P ; .6 j Clamshell

28f512

Abstract: 27C020 29C257 Winbond 29EE011 AD51 programmer for 29F010 29F040 29f040a 28F010 28F256
Contextual Info: AD51/63 f i l e : / / / A D 6 3 .HTM U 'f cl - ? '/ c GDcnp PRODUCT DATA SHEET Lfb^-Ro! t. / ; ; * fc* I *M « 4 . s - AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) ¡Product C ode ¡Pins on skt Pins on Base ¡W iring C ode ¡Package ;Base pitch” jM iscellaneous i

28C512

Abstract: cat28c512gi 1N914 CAT28C512 CAT28C513 CAT28C513G-12 CAT28C512GI-12 CAT28C513GI-12T
Contextual Info: 28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max. ■ End of Write Detection:

Atmel 89C51 microcontroller

Abstract: Microcontroller - AT89C2051 pin diagram 8051 microcontroller free atmel 89C51 user manual microcontroller 89c51 pin diagram introduction to microcontroller 89C51 AT89S55 atmel 89C51 user guide atmel 8051 40-PIN AT 89C51 PLCC 44 pin
Contextual Info: P le d ab el m e Fi m ar a w gr rd ro Ha State-of-the-art Device Programmer USER GUIDE Revision 1.04 Micro-Pro User Guide V1.04 Copyright Information Information in this document is subject to change without notice and does not represent a commitment on the part of the

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

CAT28C512

Contextual Info: 28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max. ■ End of Write Detection:

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

28C512 eeprom

Abstract: 28c512 CAT28C512
Contextual Info: 28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max. ■ End of Write Detection:

CAT28C512

Contextual Info: H 28C512/513 EE GEN FR ALO 512K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.

3014 LED smd

Abstract: 5962-E368 qml-38535 28C512 28C513 BAS 3020 SLFCM 1S555
Contextual Info: 5962-E368 D IS T R IB U T IO N S T A T E M E N T A . A p p r o v e d fo r p u b lic r e l e j s e : d i m i b u l l o n is u n lim it e d . ^004706 0007360 ^Sfl 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part nunber documentâtion system see 6.6

CAT28C512

Abstract: 1N914 CAT28C513 28C513 eeprom 1007 28c512 28C512 eeprom
Contextual Info: 28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max. –Standby: 200 µA Max. ■ End of Write Detection:

Contextual Info: •JAN 3 1 iSj, A D V A N C E D IN FO R M A TIO N c io M 512K Commercial Industrial 28C512 28C512I 64Kx8Bit Electrically Erasable PROM • Tw o PLCC Pinouts — X 28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A