A15CZ Search Results

28C512

Contextual Info: Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Low Power CMOS Dissipation: -Active: 50 mA Max. -Standby: 500 jiA Max. ■ Simple Write Operation: -On-Chip Address and Data Latches -Self-Timed Write Cycle with Auto-Clear

8127H

Contextual Info: HM62W8127H Series HM62W9127H Series 131072-word The Preliminary x 8/9-bit High Speed CMOS Static RAM H M 6 2 W 8 12 7 H / H M 6 2 W 9 12 7 H is an Ordering Information a syn cro n o u s 3.3 V o p e ra tio n h ig h speed sta tic Type No. Access time HM 62W 8127HJP-25

Contextual Info: £ ÿ j S G S ‘ T H O M S O N Hffi 5 [gfL.II(aiïïKÎ(B)M(Sg M27W401 VERY LOW VOLTAGE 4 Megabit (512K x 8) OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns(T a =0 to 70 °C) - 200ns (T a = -20 to 70 °C) - LOW POWER "CMOS” CONSUMPTION:

28c512

Abstract: 28 pin 28c512 1N914 CAT28C512 CAT28C513 PARALLEL E2PROM
Contextual Info: C= L _ V " S T " Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P age Load Timer ■ Low Power CMOS Dissipation: -Active: 50 mA Max.

a01494

Abstract: A19C Z3A18 ZDA17
Contextual Info: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 nm CMOS process and high speed circuit designing

Contextual Info: 3.0 V & 3.3 V S u p p ly HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Description Ordering Information Type No. Access tim e HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

LH5S

Contextual Info: / - V •I'. SPEC 0o. E L 0 7 X 0 7 3 I S S 0 E: Sec. 20 1905 To , S P E C Product Type I F ! C A T I O H S 4M b i t MAS K ROM LH5V4RXX l o d e l No. LH53V4R00T JKThis «pecificatioos cootains 12 pages including the cover and appendix. I f you have any objections, please contact as before issuing purchasing order.

Contextual Info: PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64Kx 16-BIT Idt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CM O S Static RAM • Equal access and cycle times — Commercial: 12/15/20/25ns • One Chip Select plus one Output Enable pin

Contextual Info: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE

28c512

Abstract: AT28C512 28 pin 28c512 28c5 A15CZ
Contextual Info: C = L _ V " S T " Advanced CAT28C512/513 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive : 50 mA Max. -S tan d b y: 500 |iA Max.

03CZ

Abstract: 09CZ A14EZ
Contextual Info: HM621864HB Series 65536-word x 18-bit High Speed CMOS Static RAM HITACHI ADE-203-739 Z Preliminary Rev. 0.0 Feb. 6, 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword x 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 fim CMOS process and high speed circuit designing

Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

Contextual Info: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical

M29F512B

Abstract: PLCC32 TSOP32 G13-14 G1314
Contextual Info: M29F512B 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8ps per Byte typical ■ PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm

M28F201

Abstract: PDIP32 TSOP32
Contextual Info: M28F201 M28V201 SGS-THOMSON G l R fflQ [E Ì [ÌL I £ M © 5 ìfl3 © Ì> 2 Megabit (256K x 8, Chip Erase FLASH M EM ORY PRODUCT PREVIEW FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 10OnA Max

st m27c1001 plcc32

Contextual Info: £ ÿ j S G S -T H O M S O N D g (S [llLi W R Sa© i M 2 7 W 1 01 VERY LOW VOLTAGE 1 Megabit (128K x 8) OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns (Ta = 0 to 70 °C) - 200ns (Ta = -20 to 70 °C) - LOW POWER "CMOS” CONSUMPTION:

Contextual Info: KS88C4204/4208 8-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS88C4204/4208 single-chip microcontroller is fabricated using an advanced CMOS process. FEATURES CPU 8-Bit Basic Timer • • Four selectable internal clock frequencies •

Z3A19

Abstract: TSOP48 outline TSOP48 footprint
Contextual Info: $ 7 . S G S -1 H 0 N IS 0 N M28V161 • S M S it g liM Q t g i LOW VOLTAGE 16 Megabit (2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each ■ 3.3V ± 0.3V SUPPLY VOLTAGE

Contextual Info: Features M ËT • Fast Read Access Time - 70 ns • 5-Volt Only Reprogramming • Sector Program Operation - Single Cycle Reprogram Erase and Program - 512 Sectors (128 words/sector) - Internal Address and Data Latches for 128 Words • Internal Program Control and Timer

A15CZ

Abstract: P40N10 A12CZ
Contextual Info: Gl SGS-TTiOMSON m M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware

Contextual Info: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415A Z Rev. 1.0 Dec. 25, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8jim CMOSprocess and high speedcircuit designing

n25Z

Abstract: Z17D A3ZD
Contextual Info: M29W800T M29W800B SGS-THOMSON 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10(is by Byte / 1 6|.is by Word typical

HM65V8512LFP15V

Abstract: M65V8512
Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static RAM Ordering Information Description Type No. Access tim e H M65V8512DFP-12 120 ns H M65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns