0003MD Search Results

Contextual Info: CAT28F002 L icen sed In tel second source 2 Megabit CMOS Boot Block Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns Electronic Signature ■ On-Chip Address and Data Latches 100,000 Program/Erase Cycles and 10 Year Data Retention ■ Blocked Architecture:

28C512

Contextual Info: Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Low Power CMOS Dissipation: -Active: 50 mA Max. -Standby: 500 jiA Max. ■ Simple Write Operation: -On-Chip Address and Data Latches -Self-Timed Write Cycle with Auto-Clear

28c512

Abstract: 28 pin 28c512 1N914 CAT28C512 CAT28C513 PARALLEL E2PROM
Contextual Info: C= L _ V " S T " Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P age Load Timer ■ Low Power CMOS Dissipation: -Active: 50 mA Max.

bq2502

Abstract: CR1632 DDD3402
Contextual Info: _bq2502 BENCHMARQ Integrated Backup Unit Features General Description >- Pow er m onitoring, backup supply, and sw itching for 3V battery-backup applications The CMOS bq2502 Integrated Backup U n it provides all th e necessary func­ tions for converting one or two b an k s

IXYS CS 2-12

Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD

CAT28F102

Contextual Info: C lA CAT2 8 F102 T A 1 _ Y s ~r Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

Contextual Info: CAT2 8 F102 Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

CAT28F002

Contextual Info: CAT28F002 L icen sed In tel second source 2 Megabit CMOS Boot Block Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns Electronic Signature ■ On-Chip Address and Data Latches 100,000 Program/Erase Cycles and 10 Year Data Retention ■ Blocked Architecture: