ZDA17 Search Results

Contextual Info: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max

n25Z

Abstract: Z17D A3ZD
Contextual Info: M29W800T M29W800B SGS-THOMSON 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10(is by Byte / 1 6|.is by Word typical

23C4000

Abstract: 23C2000 a9za
Contextual Info: SILICON INTEGR ATE» EIE D aassafll 0000000 T • T-4-b-l3-lb CMOS MASK ROM SIS 23C2000/SIS 23C2000A 256Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access Time: 200/250ns •Single + 5V Power Supply •Three-State data Outputs •TT L Compatible inputs and outputs