23C40 Search Results

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C 23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C 23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET 23C4000S

Contextual Info: 23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V

Contextual Info: •W A P H iL D IM IO IN IM ¥ 23C4096 524,288 x 8-bit CMOS ROM Features Description • 524.288 x 8 organization The 23C4096 b a 5V only, 4 2 9 4 ,304-blt. Read Only Memory. It Is organized as 524288 words by 8 bits per word, operates from a single + 5-volt supply, has a static

GM23C4000

Contextual Info: PRELIMINARY SPECIFICATION Rev 1 G M 23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description The 23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be compatible with all microprocessors and similar ap­

Contextual Info: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The 23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low

23C4096

Abstract: 23C4096A 23C4096B C4096
Contextual Info: ß^ilLliMlöINlÄY • V ,# V 23C4096 524,288 x 8-bit CMOS ROM Features Description • 524.288 x 8 organization The 23C4096 b a 5V only, 4.294,304-blt, Read O nly M em ory. It Is organized as 524,288 words b y 8 bits per w o rd, o pe rates from a single + 5-volt supply, has a sta tic

KM23C4000AG

Abstract: KM23C4000A
Contextual Info: CMOS MASK ROM KM 23C4000A 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization Tne K M 2 3 C 4 0 0 0 A is a fully static mask p ro g ra m m a b le R O M o rg a n iz e d 5 2 4 2 8 8 X 8 bit. It is fa b ric a te d u sing

23c4001

Abstract: Z107 uPD23C4001
Contextual Info: //23C4001E 524,288 x 8-BIT MASK-PROGRAMMABLE CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration The aiPC 23C4001 E is a 524,288-word by 8-bit static ROM fabricated with C M O S silicon-gate technology. Designed to operate from a single +5-volt power

tic 41

Contextual Info: KM 23C4000A CMOS MASK ROM 4M -Bit 5 1 2 K x8 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization Trie K M J J G 4 U 0 U A is a fully s ta tic m ask p ro g ra m m a b le R O M o rg a n iz e d 5 2 4 , 2 8 8 X 8 b it It is fa b ric a te d u sin g

M5M23C401

Contextual Info: M ITSUBISHI LSIs M 5M 23C401-XXXP 4 1 9 4 3 0 4 -BIT 5 24288-WORD BY 8-BIT CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M 5M 23C401-XXXP is 4194304-bit maskprogrammable high speed read-only memory. The 23C401 -XXX P is fabricated by CMOS single

23C4096A

Contextual Info: MACRONIX INC B4E D 5kôôûô2 0000157 Q ¡H A 23C4096 524,288 x 8-bit CMOS ROM Features Description • 524588 x 8 organization 'P U The 23C4096 b a 5V only, 4,294,304-blt, Read Only Memory, It is organized as 524588 words by 8 bits per word, operates from a

524,288 x 8 bit

Abstract: NCC12 UM23C4000 UM-23
Contextual Info: UNITED MICROELECTRONICS 30E D • TBSSÛS2 PD00ai3 b 262,144X 16/524,288X 8-BIT UM 23C4000 CMOS MASK-PROGRAMMABLEi ROM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ Pin Configuration 2 6 2 ,144x16-bit/524,288x8-bit organization Single +5V power supply Access times: 150/200 ns max.

23C4000

Contextual Info: 23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is

D23C4001

Abstract: 23c4001 uPD23C4001EJ
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT J U P D 2 3 C 4 1 E J 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The /¿23C4001 EJ is a 4,194,304 bits 524,288 w ords by 8 bits m ask-program m able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.

Contextual Info: 23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)

Contextual Info: m A MX23C4Q96 MACftONIX. INC. 4M-BIT 258K x 18 CMOS MASK ROM FEATURES • • • • • Operating current: 60mA Standby current: 100(iA Package - 40 pin DIP(600 mil) - 44 pin PLCC 256Kx16 organization(JEDEC pin out) Single +5V power supply Fast access time: 100/120/150/200ns

Contextual Info: 23C4000 4M-BIT MASK ROM 8 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 512K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 35mA - Standby: 100mA • Supply voltage - 5V ± 10% • Package - 32 pin PDIP (600 mil)

Contextual Info: 23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The 23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •

Contextual Info: IVDtIC 23C4096 4M-BIT C256K x 1 B CMOS MASK ROM FEATURES • Operating current: 60mA • Standby current: 100|j.A • Package - 40 pin DIP 600 mil) - 44 pin PLC C 256Kx16 organization(JEDEC pin out) Single +5V power supply Fast access time: 100/120/150/200ns

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g

Contextual Info: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using

23c4096-12

Abstract: MX23C4096 MX23C4096PC-10 MX23C4096PC-12
Contextual Info: INDEX 23C4096 4M-BIT [256K x 16] CMOS MASK ROM FEATURES • • • • • 256K x 16 organization JEDEC pin out Single +5V power supply Fast access time: 100/120/150/200ns Totally static operation Completely TTl compatible • Operating current: 60mA

Contextual Info: MITSUBISHI LSIs 23C400-XXXP, FP 4194304-BIT 262144-W 0R D BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /4194304-B IT(S24288-W 0R D BY 8-BIT)CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M 5 M 2 3 C 4 0 0 -X X X P , FP is 4 1 9 4 3 0 4 -b it PIN CONFIGURATION (TOP VIEW)