TSOP40 Search Results

IR Receiver Module

Abstract: TSOP4038
Contextual Info: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 • Supply voltage: 2.7 V to 5.5 V

TSOP4038

Abstract: ir receiver extended range ir receiver module TSAL6200
Contextual Info: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals e3 • Shielding against EMI • Supply voltage: 2.7 V to 5.5 V

a01494

Abstract: A19C Z3A18 ZDA17
Contextual Info: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially

STMicroelectronics marking code date

Abstract: CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/578 M50FW, M50LPW, M50FLW Firmware Hub and Low Pin Count Product Families, TSOP40 Environmental Friendly Package and Assembly Location Change WHAT IS THE CHANGE? The present PCN replaces and upgrades PCN MPG/EE/0086 / CPCN MPG/EEP/04/450.

M28F102

Abstract: PLCC44 QRFL9810 PLCC44 package
Contextual Info: QRFL9810 QUALIFICATION REPORT M28F102 T5-U20: 1 Mbit x16 Dual Supply Flash Memory INTRODUCTION The M28F102 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 16 bits each. It is offered in TSOP40 and PLCC44 packages. The M28F102 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%

JESD22-A112-A

Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
Contextual Info: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,

m29f102

Abstract: M29F200 PLCC44 QRFL9806
Contextual Info: QRFL9806 QUALIFICATION REPORT M29F102 and M29F105 T6-U20: 1 Mbit x16 Single Supply Flash Memory INTRODUCTION The M29F102 and M29F105 are a 1 Mbit Single Supply (5V) Flash memories organized as 64 KWord of 16 bits each. The M29F102 is offered in PLCC44 and TSOP40 packages; the M29F105 is offered in

TSOP40

Abstract: M29W004 M29W400 QR120
Contextual Info: QUALIFICATION REPORT M29W004 T6-U20: 4Mb 512K x 8 SINGLE SUPPLY FLASH MEMORY in TSOP40 INTRODUCTION The M29W004 is a 4Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in TSOP40 package. It can be programmed and erased in-system or in standard

30n40

Contextual Info: M 28W 411 M 28W 421 VERY LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY / T 7 S C S -T H O M S O N ^ 7 # » HD(g (ôai TO©iD(gl PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­

Contextual Info: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: 57. SGS-THOMSON M28F841 •LI 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 5 V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

Contextual Info: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE

XX20H

Abstract: I01498 A19D A13D
Contextual Info: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

M28V411

Abstract: M28V421
Contextual Info: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

f421

Abstract: v421 6080ns
Contextual Info: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)

CDIP32

Abstract: M28F411 M28W431 QRFL9802
Contextual Info: QRFL9802 QUALIFICATION REPORT M28W431 T6-U20: 4 Mb x8 Flash Memory in TSOP40, Catania M5 Diffusion Line INTRODUCTION The M28W431 is a 4 Mb Low Voltage Dual Supply (3/12V) Boot Block Flash memory organised as 512K bytes of 8 bits each. It is manufactured with the ST Microelectronics advanced CMOS 0.6 micron T6-U20

M28F211

Abstract: M28F221
Contextual Info: M28F211 M28F221 SGS-THOMSON M g [Î3 iH iO T ® K !]r 2 Megabit (x 8, Block Erase FLASH MEMORY P R E L IM IN A R Y D A TA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

QR107

Abstract: TSOP40 Flash M28F101 M28F102 PLCC44
Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially

Contextual Info: 5 7 . M28F211 M28F221 SGS-IHOMSON EilD @^ [ÌlLiCT^ K!lD(gi 2 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­ tection

Contextual Info: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE