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    M28V421 Search Results

    M28V421 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M28V421
    STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF 199.15KB 25
    M28V421-120N1
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-120N3
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-120N5
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-120N6
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N1
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N1R
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N3
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N5
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N6
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
    M28V421-150N6R
    SGS-Thomson EEPROM Parallel Async Original PDF 209.36KB 25
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    M28V421 Price and Stock

    STMicroelectronics

    STMicroelectronics M28V421-150N5TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M28V421-150N5TR 9,574
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    STMicroelectronics M28V421-120N3TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M28V421-120N3TR 8,738
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    STMicroelectronics M28V421-120N3

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    Vyrian M28V421-120N3 8,527
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    STMicroelectronics M28V421-150N5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M28V421-150N5 8,279
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    STMicroelectronics M28V421-150N6TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M28V421-150N6TR 8,106
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    M28V421 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M28V411

    Abstract: M28V421
    Contextual Info: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


    Original
    m28v411m28v421tsop40120ns+1m28v41patent PDF

    Contextual Info: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks – One 96K Byte Main Block


    Original
    m28v411m28v421120nstsop40+1ai01406 PDF

    Contextual Info: rZ J M28V411 M28V421 S G S -T H O M S O N LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan
    m28v411m28v421tsop40120ns PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan
    tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual PDF

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan
    m27c64am27c256bm87c257m27c512+16m27v512m27c1001m27v101m27c1024m27c2001m27v201mk45h14an-211mk48c02m48z09m48z19st16xyst16xyzm48z32ymk45h04m/mcma140p1600ta PDF

    Contextual Info: M 28V411 M 28V421 SGS-THOMSON ^ 7 # . IH [MillLI©lS©H gS LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan
    28v41128v421tsop4055natypical+1120ns PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original
    m27c64am27c256bm87c257m27c512+15m27c1001m27c1024m27c2001m27c405m27c4001m27c4002256k x8 sram 5vst95080rom 1k x8mod 10 asynchronousst1335m28v210m62803.3 -35ym48z09 PDF