M28F102 Search Results

M28F102

Abstract: PLCC44
Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially

m28f102

Abstract: Q3-02-01 sa83
Contextual Info: /= T SGS-1H0MS0N M28F102 CMOS 1 Megabit 64K x 16, Chip Erase FLASH MEMORY ABBREVIATED DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 1OOnA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns

M28F102

Abstract: PLCC44 QRFL9810 PLCC44 package
Contextual Info: QRFL9810 QUALIFICATION REPORT M28F102 T5-U20: 1 Mbit x16 Dual Supply Flash Memory INTRODUCTION The M28F102 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 16 bits each. It is offered in TSOP40 and PLCC44 packages. The M28F102 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%

Contextual Info: 5 M28F102 Ï. 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 1O^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5 ^A typical 10,000 ERASE/PROGRAM CYCLES

PLCC44 pinout

Abstract: PLCC44 M28F102 A534
Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

M28F102

Abstract: PLCC44
Contextual Info: M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

M28F102

Contextual Info: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

QR107

Abstract: TSOP40 Flash M28F101 M28F102 PLCC44
Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially

M28F102

Abstract: PLCC44 A1006
Contextual Info: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

m5m28f102j

Contextual Info: PRELIMINARY M5 M28F102P,FP,J,VP,RV-10,S-U12S-i 5S'S 1048576-BIT 65536-WORD B Y 16-BIT C M O S F L A S H M EM Q R V DESCRIPTION PIN CONFIGURATION (TOP VIEW The M itsubishi M 5 M 2 8 F 1 0 2 P ,F P J,V P JIV are high-speed

a14ct

Abstract: 28f102 M28F102 A10CZ
Contextual Info: SGS-THOMSON M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ • ■ « • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE In 1s RANGE

Contextual Info: /= # ^7# S G S -T H O M S O N ^□ ^®iLi©lT[E©K50 gi M28F102 CMOS 1 Megabit (64K x 16, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100liA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially

CDIP32

Abstract: 0795 M28F102 QR121
Contextual Info: QUALIFICATION REPORT M28F102 T5-U20: 1 Mb x16 FLASH MEMORY in TSOP40, AGRATE F8 DIFFUSION LINE INTRODUCTION The M28F102 is a 1 Mb Dual Supply (5/12V) Flash memory organised as 64K bytes x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which

TSOP40 Flash

Abstract: M28F102 QR105
Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially

Contextual Info: SEE ]> • ? q g q g 37 00377^ S C S -T H O M S O N I1WMDÊI fl5 b ■ S G T H s r s - thohson M28F102 CMOS 1 Megabit 64K x 16 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100uA Max 10,000 ERASE/PROGRAM CYCLES

Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10jjs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

M28F102

Abstract: PLCC44
Contextual Info: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

1N914

Abstract: M28F102 PDIP40 PLCC44
Contextual Info: SGS-THOMSON *7 Æ * M28F102 [M ]D g ^ (Q E [L E ¥^ (Q )R O D © ï CMOS 1 Megabit (64K x 16) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 10O^A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

AN1252

Abstract: st m29F102bb DATASHEET AN1167 M28F102 M29F102BB PLCC44 st m29F102bb
Contextual Info: AN1252 APPLICATION NOTE Replacing the M28F102 with the M29F102BB Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F102 in

Contextual Info: /= 7 ^7 # « S G S -T H O M S O N 5iD i@iLi©T Q MD(gi M28F102 CMOS 1 Megabit (64K x 16) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100(iA Max ■\ ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

AN1167

Abstract: AN1252 M28F102 M29F102BB PLCC44 st m29F102bb
Contextual Info: AN1252 APPLICATION NOTE Replacing the M28F102 with the M29F102BB Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F102 in

Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 35ns ■ FAST PROGRAMMING TIME: 8^s typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word