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    AI00629D Search Results

    AI00629D Datasheets Context Search

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    M28F102

    Abstract: PLCC44
    Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


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    m28f1020020h0050hplcc44 PDF

    PLCC44 pinout

    Abstract: PLCC44 M28F102 A534
    Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


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    m28f1020020h0050h120ns+6150nsai00629dplcc44tsop40plcc44 pinouta534 PDF

    M28F102

    Abstract: PLCC44
    Contextual Info: M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original
    m28f102100ns0020h0050h+5interface100ns120ns150nsai00629dplcc44 PDF

    M28F102

    Contextual Info: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original
    m28f102plcc44tsop40micr11+2100ns120ns PDF

    M28F102

    Abstract: PLCC44
    Contextual Info: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original
    m28f102plcc44tsop40 PDF

    M28F102

    Abstract: PLCC44
    Contextual Info: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original
    m28f102plcc44tsop40 PDF