30N40 Search Results
30N40 Price and Stock
Challenge Electronics CT20Z-30N400-2BUZZER ELEMENT 4KHZ 20MM |
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CT20Z-30N400-2 | Tray | 1,000 | 1 |
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Challenge Electronics CT27Z-30N400-1BUZZER ELEMENT 4KHZ 27MM |
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CT27Z-30N400-1 | Tray | 1,000 | 1 |
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Challenge Electronics CT08Z-30N4000-1BUZZER ELEMENT 40KHZ 8MM |
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CT08Z-30N4000-1 | Tray | 1,000 | 1 |
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Carlo Gavazzi Holding AG ICS08S30N40M5POIND PROX M8 SHORT PNP NO |
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ICS08S30N40M5PO | Box | 5 | 1 |
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ICS08S30N40M5PO |
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ICS08S30N40M5PO | Bulk | 1 |
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ICS08S30N40M5PO | Bulk | 1 |
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ICS08S30N40M5PO | 2 | 2 |
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ICS08S30N40M5PO |
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ICS08S30N40M5PO | 7 |
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SiTime Corporation SIT1602BC-12-30N-4.096000MEMS OSC XO 4.0960MHZ H/LV-CMOS |
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SIT1602BC-12-30N-4.096000 | 1 |
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30N40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 30N40Q IXFT 30N40Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 400 V VDGR TJ = 25°C to 150°C; RGS = 1 MW |
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30N40Q O-247 O-268 | |
30n40Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 30N40Q IXFT 30N40Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 400 V VDGR TJ = 25°C to 150°C; RGS = 1 MW |
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30N40Q O-247 O-268 O-247) 30n40 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 |