HM65V8512 Search Results

Contextual Info: 3.0 V & 3.3 V S u p p ly HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Description Ordering Information Type No. Access tim e HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

Contextual Info: fifiNEW PRODUCT HM65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static R A M 0H IT A C H I Preliminary Rev. 4 H3. 9.20 • Feature • Single 3V ± 1 0 % • High speed A ccess time C E access time . 150ns (max.) Cycle time

Contextual Info: HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM HM65V8512 is a pseudo-static RAM organized as 524,288-word x 8-bit. HM65V8512 realized low power consumption by employing 0.8 im CMOS process technology. Power supply voltage is 3 V ±10% and all inputs

Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

HM65V8512LFP15V

Abstract: Pseudostatic RAM HM65V8512LTT-15 HM65V8512 HM65V8512LFP-15 hm65v8512ltt15
Contextual Info: HM65V8512 Series 524288-word x 8-bit High Speed Pseudo Static RAM HM65V8512 is a pseudo-static RAM organized as 524,288-word × 8-bit. HM65V8512 realized low power consumption by employing 0.8 µm CMOS process technology. Power supply voltage is 3 V ± 10% and all inputs

Contextual Info: HM65W8512 Series P relim inary 524,288-word x 8-bit High Speed Pseudo Static RAM Ordering Information Description HM65W8512 is a pseudo-static RAM orga­ nized as 524,288-word X 8-bit. Power supply voltage is 3.3 V ± 0.3 V. HM65W8512 utilizes the same die as HM65V8512, V c c of which is

65V8512LFP-15

Abstract: 65V8512LFP 65V8
Contextual Info: HM65V8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-400E Z Rev. 5.0 Jul. 26, 1995 Description The Hitachi HM65V8512 is a CMOS pseudo static RAM organized 524288-word x 8-bit. It realized low power consumption by employing 0.8 (im Hi-CMOS process technology.

HM65V8512LFP15V

Abstract: M65V8512
Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static RAM Ordering Information Description Type No. Access tim e H M65V8512DFP-12 120 ns H M65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

65536-word

Abstract: 8192-WORD SRAM
Contextual Info: Contents • L in e U p o f H ita c h i IC M e m o r i e s . 7 • P a c k a g e In f o rm a tio n s .

HM51W16405

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

8512DFP-15

Abstract: 8512DFP-12
Contextual Info: HM65W8512 Series Preliminary 524,286-word x 8-bit High Speed Pseudo Static RAM Description Ordering Information H M 65W 8512 is a p se u d o -sta tic R A M o rg a ­ n ized as 5 2 4 ,2 8 8 -w o rd X 8-b it. P o w er supply voltage is 3.3 V ± 0.3 V. H M 65W 8512 utilizes

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

hitachi hn27c256

Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Contextual Info: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /

SC 2272

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

4096 RAM

Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
Contextual Info: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.

HN58C256 Series

Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Contextual Info: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max

eprom 2904

Abstract: L 4440 72-Pin SO-DIMM
Contextual Info: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.

Contextual Info: HM65W8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-289B Z Rev. 2.0 Dec. 9, 1994 Description The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 512-kword x 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (im Hi-CMOS process

SC-606-B

Abstract: HM62256B MS-024BB HM6207H HM6208H HM6264B HM6287 HM6288 HM9264B 024bb
Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration of your circumstance. When you use the package that has the material variation, please write down the package name in a form in

eprom 2904

Abstract: 4502 C DRAM 64kx16
Contextual Info: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —

EDR-7311

Abstract: MS-024BB MO-142BO HN27C256A
Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

658512

Abstract: HM658512LP-12 32PIN HM658512DP-10 TC518512 Hitachi Scans-001
Contextual Info: — 4M Pseudo X m « tt % OC TAAC max ns) TCAC max (ns) TOE sax (ns) S t a t i c R A M ( 5 2 4 2 8 8 x 8) •f y ? « tt -Y TOH •in (ns) 32PIN m TOD ■ax (ns) TWP ■in (ns) TDS mini (ns) TDH ■in (ns) TWD ■in (ns) TWR ■ax (ns) V D D or V C C IDO

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2