65V8 Search Results

khs 313

Contextual Info: TOSHIBA 65V8015BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 65V8015BTG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight T C 5165805B FT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: TOSHIBA 65V8035BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 65V8035BTG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight T C 5164805B FT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: TO SHIBA 65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The 65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: fifiNEW PRODUCT 65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static R A M 0H IT A C H I Preliminary Rev. 4 H3. 9.20 • Feature • Single 3V ± 1 0 % • High speed A ccess time C E access time . 150ns (max.) Cycle time

Contextual Info: 3.0 V & 3.3 V Supply 65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time 65V8512DFP-12 120 ns 65V8512DFP-15 150 ns 65V8512LFP-12 120 ns 65V8512LFP-15 150 ns 65V8512LFP-12V 120 ns

Contextual Info: HM65W8512 Series P relim inary 524,288-word x 8-bit High Speed Pseudo Static RAM Ordering Information Description HM65W8512 is a pseudo-static RAM orga­ nized as 524,288-word X 8-bit. Power supply voltage is 3.3 V ± 0.3 V. HM65W8512 utilizes the same die as 65V8512, V c c of which is

65V8512LFP-15

Abstract: 65V8512LFP 65V8
Contextual Info: 65V8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-400E Z Rev. 5.0 Jul. 26, 1995 Description The Hitachi 65V8512 is a CMOS pseudo static RAM organized 524288-word x 8-bit. It realized low power consumption by employing 0.8 (im Hi-CMOS process technology.

HM65V8512LFP15V

Abstract: M65V8512
Contextual Info: 3.0 V & 3.3 V Supply 65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static RAM Ordering Information Description Type No. Access tim e H 65V8512DFP-12 120 ns H 65V8512DFP-15 150 ns 65V8512LFP-12 120 ns 65V8512LFP-15 150 ns 65V8512LFP-12V 120 ns