28F256 Search Results

TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Contextual Info: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current

Contextual Info: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program

28F256L30

Abstract: 28F128L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

28F256A

Abstract: 29024
Contextual Info: INTEL CORP inter • MEMORY/LOGIC 20E D ■ 4a2bl7b 00b72fll 3 ■ MSWMKSIS 0MF ^!M/?\?D©M 28F256A 256K (32K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte-Program

Intel StrataFlash Memory j3

Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads

F256A-200

Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
Contextual Info: in te l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10/ j.s Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

251903

Abstract: 290737
Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52 mHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

251903

Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase ■ Software — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode

Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

intel 28F256

Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020

28F128L30

Abstract: 28F256L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

28F128L18

Abstract: 28F256L18 28F640L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 PF48F3000 8x10x1 etox 256l18 16x128
Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

RC28F256K18C120

Abstract: RC28F256K3C120 ba 4913 N2826 NSW16 BGA PACKAGE TOP MARK intel Datasheet Micron MLC 3 Volt Intel StrataFlash Memory "NOR Flash" intel 28f 28F128K18
Contextual Info: 3 Volt Synchronous Intel StrataFlash Memory 28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 x16 Preliminary Datasheet Product Features • Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads,

PF48F3000

Abstract: 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18 28F128L18, 28F256L18 Datasheet Product Features „ „ High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

a6628

Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020

Contextual Info: in te i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5 % Vpp High-Performance Read

251902

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Software — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode

Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

28F640J3

Abstract: E28F640J3A-120 Intel StrataFlash Memory j3 28F256K18 28F128J3 28F160S3 28F256J3 28F320J3 28F320J5 28F320S3
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page-Mode Reads